DATA SHEET
SILICON POWER TRANSISTOR
2SA1648,1648-Z
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
1.6 鹵0.2
1
2
3
鈥?Available for high-current control in small dimension
鈥?Z type is a lead processed product and is deal for mounting a
hybrid IC.
鈥?Mold package that does not require an insulating board or
insulation bushing
鈥?Low collector saturation voltage:
V
CE(sat)1
=
鈭?.3
V MAX. (I
C
=
鈭?.0
A)
鈥?Fast switching speed:
t
f
= 0.3
碌
s MAX. (I
C
=
鈭?.0
A)
鈥?High DC current gain and excellent linearity
1.1 鹵0.2
7.0 MIN.
13.7 MIN.
FEATURES
5.5 鹵0.2
The 2SA1648 is a mold power transistor developed for high-
speed switching and features a very low collector-to-emitter
saturation voltage.
This transistor is ideal for use in switching regulators, DC/DC
converters, motor drivers, solenoid drivers, and other low-voltage
power supply devices, as well as for high-current switching.
PACKAGE DRAWINGS (Unit: mm)
1.5
鈭?.1
+0.2
6.5 鹵0.2
5.0 鹵0.2
4
2.3 鹵0.2
0.5 鹵0.1
0.5
鈭?.1
2.3 2.3
0.75
+0.2
0.5
鈭?.1
+0.2
TO-251 (MP-3)
1.5-
0.1
+0.2
ABSOLUTE MAXIMUM RATINGS (T
A
= 25擄C)
0.8 4.3 MAX.
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Base current (DC)
Total power dissipation (Tc = 25擄C)
Total power dissipation (Ta = 25擄C)
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
Note 1
Ratings
鈭?00
鈭?0
鈭?.0
鈭?.0
鈭?0
鈭?.5
18
1.0
Note 2
Unit
V
V
V
A
A
A
W
6.5鹵0.2
5.0鹵0.2
4
2.3鹵0.2
0.5鹵0.1
1
2
3
2.0
MIN.
5.5鹵0.2
10.0 MAX.
1.1鹵0.2
0.9
0.8
MAX. MAX.
2.3 2.3
0.8
I
B(DC)
P
T
P
T
T
j
T
stg
TO-252 (MP3Z)
, 2.0
Note 3
W
擄C
擄C
ELECTRODE CONNECTION
1.
2.
3.
4.
Base
Collector
Emitter
Collector (Fin)
150
鈭?5
to +150
Notes 1.
PW
鈮?/div>
300
碌
s, Duty Cycle
鈮?/div>
10%
2.
Printing board mounted
3.
7.5 mm
2
脳
0.7 mm ceramic board mounted
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16121EJ3V0DS00 (3rd edition)
Date Published August 2004 NS CP(K)
Printed in Japan
The mark
shows major revised points.
c
0.7
1.0 MIN.
1.8TYP.
2002
NEC
1
2
3
4
5
