DATA SHEET
SILICON POWER TRANSISTOR
2SA1645, 2SA1645-Z
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
The 2SA1645 is a mold power transistor developed for high-
speed switching and features a very low collector-to-emitter
saturation voltage.
This transistor is ideal for use in switching
power supplies, DC/DC converters, motor drivers, solenoid drivers,
and other low-voltage power supply devices, as well as for high-
current switching.
PACKAGE DRAWING (UNIT: mm)
FEATURES
鈥?Fast switching speed
鈥?Low collector-to-emitter saturation voltage:
V
CE(sat)
=
鈭?.3
V MAX. @I
C
=
鈭?
A
ABSOLUTE MAXIMUM RATINGS (Ta = 25擄C)
擄
Parameter
Collector to base voltage
Collector to emitter
voltage
Emitter to base voltage
Collector current
Collector current
Symbol
V
CBO
V
CEO
Conditions
Ratings
鈭?50
鈭?00
鈭?.0
鈭?.0
PW
鈮?/div>
300
碌
s,
Duty Cycle
鈮?/div>
10%
Base current
Total power dissipation
Total power dissipation
Junction temperature
Storage temperature
I
B(DC)
P
T
P
T
T
j
T
stg
Tc = 25
擄C
Ta = 25
擄C
鈭?.5
35
1.5
150
鈭?5
to
+150
A
W
W
擄C
擄C
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Unit
V
V
/HDG
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V
EBO
I
D(DC)
I
C(pulse)
V
A
A
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鈭?4
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D15587EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
漏
2002
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