Transistor
2SA1619, 2SA1619A
Silicon PNP epitaxial planer type
For low-frequency power amplification and driver amplification
Complementary to 2SC4208 and 2SC4208A
5.0鹵0.2
4.0鹵0.2
Unit: mm
s
Features
q
0.7鹵0.2
8.0鹵0.2
+0.15
q
Complementary pair with 2SC4208 and 2SC4208A.
Allowing supply with the radial taping and automatic insertion
possible.
(Ta=25藲C)
Ratings
鈥?0
鈥?0
鈥?5
鈥?0
鈥?
鈥?
鈥?0.5
1
150
鈥?5 ~ +150
Unit
V
Parameter
Collector to
base voltage
Collector to
2SA1619
2SA1619A
2SA1619
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
13.5鹵0.5
s
Absolute Maximum Ratings
0.7鹵0.1
0.45
鈥?.1
0.45
鈥?.1
+0.15
emitter voltage 2SA1619A
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
V
A
A
W
藲C
藲C
1 2 3
2.54鹵0.15
2.3鹵0.2
V
1.27
1.27
1:Emitter
2:Collector
3:Base
TO鈥?2NL Package
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base
voltage
Collector to emitter
voltage
2SA1619
2SA1619A
2SA1619
2SA1619A
(Ta=25藲C)
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE1*
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
V
CB
= 鈥?0V, I
E
= 0
I
C
= 鈥?0碌A, I
E
= 0
I
C
= 鈥?0mA, I
B
= 0
I
E
= 鈥?0碌A, I
C
= 0
V
CE
= 鈥?0V, I
C
= 鈥?50mA
V
CE
= 鈥?0V, I
C
= 鈥?00mA
I
C
= 鈥?00mA, I
B
= 鈥?0mA
I
C
= 鈥?00mA, I
B
= 鈥?0mA
V
CB
= 鈥?0V, I
E
= 50mA, f = 200MHz
V
CB
= 鈥?0V, I
E
= 0, f = 1MHz
鈥?0
鈥?0
鈥?5
鈥?0
鈥?
85
40
鈥?0.35
鈥?.1
200
6
15
鈥?0.6
鈥?.5
V
V
MHz
pF
160
340
min
typ
max
鈥?0.1
Unit
碌A
V
V
V
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
*
h
FE1
Rank classification
Q
85 ~ 170
R
120 ~ 240
S
170 ~ 340
Rank
h
FE1
1
1
2
3
4
