DATA SHEET
SILICON TRANSISTORS
2SA1376, 1376A
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH VOLTAGE AMPLIFIERS
FEATURES
鈥?High voltage
V
CEO
:
鈭?80
V /
鈭?00
V
(2SA1376/2SA1376A)
鈥?Excellent h
FE
linearity
鈥?High total power dissipation in small dimension:
P
T
: 0.75 W
鈥?Complementary transistor with 2SC3478 and 2SC3478A
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25擄C)
擄
2SA1376/2SA1376A
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
*
P
T
T
j
T
stg
Ratings
鈭?00
鈭?80/鈭?00
鈭?
鈭?00
鈭?00
0.75
150
鈭?5
to +150
Unit
V
V
V
mA
mA
W
擄C
擄C
* PW
鈮?/div>
10 ms, duty cycle
鈮?/div>
50%
ELECTRICAL CHARACTERISTICS (Ta = 25擄C)
擄
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
DC current gain
DC base voltage
Collector saturation voltage
Base saturation voltage
Output capacitance
Gain bandwidth product
Turn-on time
Turn-off time
Symbol
I
CBO
I
EBO
h
FE1
**
h
FE2
**
V
BE
**
V
CE(sat)
**
V
BE(sat)
**
C
ob
f
T
t
on
t
off
Conditions
V
CB
=
鈭?00
V, I
E
= 0
V
EB
=
鈭?
V, I
C
= 0
V
CE
=
鈭?0
V, I
C
=
鈭?0
mA
V
CE
=
鈭?0
V, I
C
=
鈭?00
mA
V
CE
=
鈭?0
V, I
C
=
鈭?0
mA
I
C
=
鈭?0
mA, I
B
=
鈭?
mA
I
C
=
鈭?0
mA, I
B
=
鈭?
mA
V
CB
=
鈭?0
V, I
E
= 0, f = 1.0 MHz
V
CE
=
鈭?0
V, I
E
= 10 mA
I
C
=
鈭?0
mA, I
B1
=
鈭捍
B2
=
鈭?
mA,
V
CC
= 鈥?0 V
80
135
81
鈭?00
MIN.
2SA1376/2SA1376A
TYP.
MAX.
鈭?00
鈭?00
300/200
鈭?50
鈭?.2
鈭?.8
3.5
120
0.16
1.5
600/400
鈭?00
鈭?.3
鈭?.2
4.0
Unit
nA
nA
鈭?/div>
鈭?/div>
mV
V
V
pF
MHz
碌
s
碌
s
** Pulse test PW
鈮?/div>
350
碌
s, duty cycle
鈮?/div>
2% per pulsed
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16194EJ1V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
漏
2002
1998
2SA1376U相關(guān)型號(hào)PDF文件下載
-
型號(hào)
版本
描述
廠商
下載
-
英文版
Ge PNP Drift
ETC
-
英文版
Ge PNP Drift
ETC [ETC]
-
英文版
Ge PNP Drift
ETC
-
英文版
Ge PNP Drift
ETC [ETC]
-
英文版
Ge PNP Drift
ETC
-
英文版
Ge PNP Drift
ETC [ETC]
-
英文版
Ge PNP Drift
ETC
-
英文版
Ge PNP Drift
ETC [ETC]
-
英文版
Ge PNP Drift
ETC
-
英文版
Ge PNP Drift
ETC [ETC]
-
英文版
PNP/NPN SILICON EPITAXIAL TRANSISTOR
-
英文版
Silicon PNP Power Transistors
ISC [Incha...
-
英文版
PNP/NPN SILICON EPITAXIAL TRANSISTOR
NEC [NEC]
-
英文版
SILICON POWER TRANSISTOR
-
英文版
Silicon PNP Power Transistors
ISC [Incha...
-
英文版
SILICON POWER TRANSISTOR
NEC [NEC]
-
英文版
PNP SILICON POWER TRANSISTORS
-
英文版
PNP SILICON POWER TRANSISTORS
NEC [NEC]
-
英文版
SILICON POWER TRANSISTOR
-
英文版
isc Silicon PNP Power Transistor
ISC [Incha...
1
2
3
4
5
6
