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2SA1129 Datasheet

  • 2SA1129

  • PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMP...

  • 104.83KB

  • 6頁

  • NEC   NEC

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DATA SHEET
SILICON POWER TRANSISTOR
2SA1129
PNP SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
The 2SA1129 is a mold power transistor developed for mid-speed
switching, and is ideal for use as a ramp driver.
ORDERING INFORMATION
Part No.
2SA1129
Package
TO-220AB
FEATURES
鈥?Large current capacity with small package: I
C(DC)
=
鈭?.0
A
鈥?Low collector saturation voltage:
V
CE(sat)
=
鈭?.3
V MAX. @I
C
=
鈭?.0
A, IB =
鈭?.1
A
鈥?Complementary transistor: 2SC2654
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25擄C)
擄
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Base current (DC)
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
I
B(DC)
P
T
T
j
T
stg
T
C
= 25擄C
T
A
= 25擄C
PW
鈮?/div>
300
碌
s,
duty cycle
鈮?/div>
10%
Conditions
Ratings
鈭?0
鈭?0
鈭?.0
鈭?.0
鈭?5
鈭?.5
40
1.5
150
鈭?5
to +150
Unit
V
V
V
A
A
A
W
W
擄C
擄C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14856EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
漏
2002

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