LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
3
COLLECTOR
2SA1037AK*LT1
3
1
BASE
2
EMITTER
1
2
CASE 318鈥?8, STYLE 6
MAXIMUM RATINGS
Rating
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
Collector Current 鈥?Continuous
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CEO
V
CBO
V
EBO
SOT鈥?23 (TO鈥?36AB)
Value
鈥?0
鈥?0
鈥?.0
鈥?50
0.2
150
-55 ~+150
Unit
V
V
V
mAdc
W
擄C
擄C
I
C
P
C
T
j
T
stg
DEVICE MARKING
2SA1037AK*LT1 =G3F
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C unless otherwise noted.)
Characteristic
Collector鈥揈mitter Breakdown Voltage
(I
C
= 鈥? mA)
Emitter鈥揃ase Breakdown Voltage
(I
E
= 鈥?50
碌A)
Collector鈥揃ase Breakdown Voltage
(I
C
= 鈥?50
碌A)
Collector Cutoff Current
(V
CB
= 鈥?60 V)
Emitter cutoff current
(V
EB
= 鈥?6 V)
Collector-emitter saturation voltage
(I
C
/ I
B
= 鈥?50 mA / 鈥?5m A)
DC current transfer ratio
(V
CE
= 鈥?6 V, I
C
= 鈥?mA)
Transition frequency
(V
CE
= 鈥?12 V, I
E
= 2mA, f=30MHz )
Output capacitance
(V
CB
= 鈥?12 V, I
E
= 0A, f =1MHz )
Symbol
V
(BR)CEO
Min
鈥?50
鈥?
鈥?60
鈥?/div>
鈥?/div>
鈥?/div>
120
鈥?/div>
鈥?/div>
Typ
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥撯€?/div>
140
4.0
Max
鈥?/div>
鈥?/div>
鈥?/div>
鈥?0.1
鈥?0.1
-0.5
560
鈥撯€?/div>
5.0
Unit
V
V
V
碌A
碌A
V
鈥撯€?/div>
MHz
pF
V
(BR)EBO
V
(BR)CBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
C
ob
h
FE
values are classified as follows:
hFE
*
Q
120~270
R
180~390
S
270~560
M35鈥?/3
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