Transistor
2SA0683, 2SA0684
(2SA683, 2SA684)
Silicon PNP epitaxial planer type
For low-frequency power amplification and driver amplification
Complementary to 2SC1383 and 2SC1384
5.9鹵0.2
Unit: mm
4.9鹵0.2
G
G
Complementary pair with 2SC1383 and 2SC1384.
Allowing supply with the radial taping.
(Ta=25藲C)
Ratings
鈥?0
鈥?0
鈥?5
鈥?0
鈥?
鈥?.5
鈥?
1
150
鈥?5 ~ +150
Unit
V
2.54鹵0.15
+0.3
+0.2
I
Absolute Maximum Ratings
Parameter
Collector to
base voltage
Collector to
2SA0683
2SA0684
2SA0683
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
emitter voltage 2SA0684
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
V
0.45
鈥?.1
0.45
鈥?.1
1.27
+0.2
V
A
A
W
藲C
藲C
1.27
13.5鹵0.5
0.7
鈥?.2
0.7鹵0.1
8.6鹵0.2
I
Features
I
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base
voltage
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
*
h
(Ta=25藲C)
Symbol
I
CBO
Conditions
V
CB
= 鈥?0V, I
E
= 0
I
C
= 鈥?0碌A(chǔ), I
E
= 0
I
C
= 鈥?mA, I
B
= 0
I
E
= 鈥?0碌A(chǔ), I
C
= 0
V
CE
= 鈥?0V, I
C
= 鈥?00mA
V
CE
= 鈥?V, I
C
= 鈥?A
I
C
= 鈥?00mA, I
B
= 鈥?0mA
I
C
= 鈥?00mA, I
B
= 鈥?0mA
V
CB
= 鈥?0V, I
E
= 50mA, f = 200MHz
V
CB
= 鈥?0V, I
E
= 0, f = 1MHz
鈥?0
鈥?0
鈥?5
鈥?0
鈥?
85
50
鈥?0.2
鈥?0.85
200
20
30
鈥?0.4
鈥?.2
V
V
MHz
pF
340
min
typ
max
鈥?0.1
Unit
碌A(chǔ)
V
2SA0683
2SA0684
2SA0683
2SA0684
V
CBO
V
CEO
V
EBO
h
FE1*
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
3.2
1
2
3
1:Emitter
2:Collector
3:Base
EIAJ:SC鈥?1
TO鈥?2L Package
V
V
FE1
Rank classification
Q
85 ~ 170
R
120 ~ 240
S
170 ~ 340
Rank
h
FE1
Note.) The Part numbers in the Parenthesis show conventional part number.
1
1
2
3
4
