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2N7002LT3G Datasheet

  • 2N7002LT3G

  • Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−...

  • 62.57KB

  • 4頁

  • ONSEMI

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2N7002L
Small Signal MOSFET
60 V, 115 mA, N鈭扖hannel SOT鈭?3
Features
鈥?/div>
Pb鈭扚ree Packages are Available
MAXIMUM RATINGS
Rating
Drain鈭扴ource Voltage
Drain鈭扜ate Voltage (R
GS
= 1.0 MW)
Drain Current
鈭?Continuous T
C
= 25擄C (Note 1)
鈭?Continuous
T
C
= 100擄C (Note 1)
鈭?Pulsed (Note 2)
Gate鈭扴ource Voltage
鈭?Continuous
鈭?Non鈭抮epetitive (t
p
鈮?/div>
50
ms)
Symbol
V
DSS
V
DGR
I
D
I
D
I
DM
Value
60
60
鹵
115
鹵
75
鹵
800
Unit
Vdc
Vdc
mAdc
60 V
V
(BR)DSS
http://onsemi.com
R
DS(on)
MAX
7.5
W
@ 10 V,
500 mA
N鈭扖hannel
3
I
D
MAX
115 mA
V
GS
V
GSM
鹵
20
鹵
40
Vdc
Vpk
1
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
2
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR鈭? Board
(Note 3) T
A
= 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(Note 4) T
A
= 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P
D
Max
225
1.8
556
300
2.4
R
qJA
T
J
, T
stg
417
鈭?5 to
+150
擄C/W
擄C
702
W
Unit
mW
mW/擄C
擄C/W
mW
mW/擄C
3
MARKING DIAGRAM
& PIN ASSIGNMENT
Drain
3
1
2
R
qJA
P
D
SOT鈭?3
CASE 318
STYLE 21
702
W
1
2
Gate
= Device Code
= Work Week
Source
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse Test: Pulse Width
鈮?/div>
300
ms,
Duty Cycle
鈮?/div>
2.0%.
3. FR鈭? = 1.0 x 0.75 x 0.062 in.
4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.
ORDERING INFORMATION
Device
2N7002LT1
2N7002LT3
2N7002LT1G
2N7002LT3G
SOT鈭?3
(Pb鈭抐ree)
Package
SOT鈭?3
Shipping
鈥?/div>
3000 Tape & Reel
10,000 Tape & Reel
3000 Tape & Reel
10,000 Tape & Reel
鈥燜or information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
漏
Semiconductor Components Industries, LLC, 2004
1
July, 2004 鈭?Rev. 2
Publication Order Number:
2N7002L/D

2N7002LT3G 產(chǎn)品屬性

  • 10,000

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • -

  • MOSFET N 通道，金屬氧化物

  • 邏輯電平門

  • 60V

  • 115mA

  • 7.5 歐姆 @ 500mA，10V

  • 2.5V @ 250µA

  • -

  • 50pF @ 25V

  • 225mW

  • 表面貼裝

  • TO-236-3，SC-59，SOT-23-3

  • SOT-23-3（TO-236）

  • 帶卷 (TR)

  • 2N7002LT3G-ND2N7002LT3GOSTR

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