2N7000 Datasheet

IC型號(hào)：
2N7000
PDF描述：
Small Signal MOSFET 200 mAmps, 60 Volts N-Channel TO-92
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ONSEMI

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2N7000

Preferred Device

Small Signal MOSFET

200 mAmps, 60 Volts

N鈥揅hannel TO鈥?2

MAXIMUM RATINGS

Rating

Drain Source Voltage

Drain鈥揋ate Voltage (RGS = 1.0 M鈩?

Gate鈥揝ource Voltage

鈥?Continuous

鈥?Non鈥搑epetitive (tp

鈮?/div>

碌s)

Drain Current

鈥?Continuous

鈥?Pulsed

Total Power Dissipation @ TC = 25擄C

Derate above 25擄C

Operating and Storage Temperature

Range

Symbol

VDSS

VDGR

VGS

VGSM

IDM

TJ, Tstg

Value

鹵20

鹵40

200

500

350

2.8

鈥?5 to

+150

mW/擄C

擄C

Unit

Vdc

Vpk

mAdc

http://onsemi.com

200 mAMPS

60 VOLTS

RDS(on) = 5

鈩?/div>

N鈥揅hannel

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction to

Ambient

Maximum Lead Temperature for

Soldering Purposes, 1/16鈥?from case

for 10 seconds

Symbol

胃JA

Max

357

300

Unit

擄C/W

擄C

TO鈥?2

CASE 29

Style 22

MARKING DIAGRAM

& PIN ASSIGNMENT

2N7000

YWW

Source

Gate

Drain

= Year

= Work Week

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 3 of this data sheet.

Preferred

devices are recommended choices for future use

and best overall value.

漏

Semiconductor Components Industries, LLC, 2000

November, 2000 鈥?Rev. 5

Publication Order Number:

2N7000/D

標(biāo)準(zhǔn)包裝
2,500
類別
分離式半導(dǎo)體產(chǎn)品
家庭
FET - 單
系列
STripFET™
FET 型
MOSFET N 通道，金屬氧化物
FET 特點(diǎn)
邏輯電平門(mén)
漏極至源極電壓(Vdss)
60V
電流 - 連續(xù)漏極(Id) @ 25° C
350mA
開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C
5 歐姆 @ 500mA，10V
Id 時(shí)的 Vgs(th)（最大）
3V @ 250µA
閘電荷(Qg) @ Vgs
2nC @ 5V
輸入電容 (Ciss) @ Vds
43pF @ 25V
功率 - 最大
1W
安裝類型
通孔
封裝/外殼
TO-226-3、TO-92-3 標(biāo)準(zhǔn)主體
供應(yīng)商設(shè)備封裝
TO-92-3
包裝
散裝
其它名稱
497-3110

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