NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 1 聳 MARCH 94
FEATURES
* 40 Volt V
CEO
* Gain of 50 at I
C
= 1 Amp
* P
tot
= 1 Watt
2N6714
2N6715
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
= 25擄C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
40
30
5
2
1
1
E-Line
TO92 Compatible
2N6714 2N6715
50
40
UNIT
V
V
V
A
A
W
擄C
-55 to +200
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄C unless otherwise stated).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward
Current Transfer
Ratio
Transition
Frequency
Collector Base
Capacitance
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(on)
h
FE
f
T
C
CB
55
60
50
50
40
30
5
0.1
0.1
0.5
1.2
55
60
50
50
2N6714
MIN.
50
40
5
0.1
0.1
0.5
1.2
2N6715
MAX.
V
V
V
碌
A
碌
A
碌
A
UNIT
CONDITIONS.
I
C
=1mA, I
E
=0
I
C
=10mA, I
B
=0*
I
E
=1mA, I
C
=0
V
CB
=40V, I
E
=0
V
CB
=50V, I
E
=0
V
EB
=5V, I
C
=0
I
C
=1A, I
B
=100mA*
IC=1A, V
CE
=1V*
I
C
=10mA, V
CE
=1V*
I
C
=100mA, V
CE
=1V*
I
C
=1A, V
CE
=1V*
MAX. MIN.
V
V
250
500
30
250
500
30
MHz
pF
I
C
=50mA, V
CE
=10V
V
CE
=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300
碌
s. Duty cycle
1
