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2N6667AK Datasheet

IC型號(hào)：
2N6667AK
PDF描述：
10A, 60V, PNP, Si, POWER TRANSISTOR, TO-220AB, 3 PIN
文件大?。?/label>
77.69KB
PDF頁(yè)數(shù)：
8頁(yè)
芯片廠家：
ONSEMI

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上傳產(chǎn)品規(guī)格書

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ON Semiconductor

)

Darlington Silicon

Power Transistors

. . . designed for general鈥損urpose amplifier and low speed

switching applications.

2N6667

2N6668

PNP SILICON

DARLINGTON

POWER TRANSISTORS

10 AMPERES

60鈥?0 VOLTS

65 WATTS

鈥?/div>

High DC Current Gain 鈥?/div>

鈥?/div>

鈥?/div>

鈥?/div>

鈥?/div>

鈥?/div>

hFE = 3500 (Typ) @ IC = 4 Adc

Collector鈥揈mitter Sustaining Voltage 鈥?@ 200 mAdc

VCEO(sus) = 60 Vdc (Min) 鈥?2N6667

= 80 Vdc (Min) 鈥?2N6668

Low Collector鈥揈mitter Saturation Voltage 鈥?/div>

VCE(sat) = 2 Vdc (Max)@ IC = 5 Adc

Monolithic Construction with Built鈥揑n Base鈥揈mitter Shunt Resistors

TO鈥?20AB Compact Package

Complementary to 2N6387, 2N6388

COLLECTOR

4

1

2

STYLE 1:

PIN 1.

2.

3.

4.

BASE

COLLECTOR

EMITTER

COLLECTOR

3

CASE 221A鈥?9

TO鈥?20AB

BASE

[

8k

[

120

EMITTER

Figure 1. Darlington Schematic

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MAXIMUM RATINGS (1)

Rating

Symbol

VCEO

VCB

VEB

IC

IB

2N6667

60

60

2N6668

80

80

Unit

Vdc

Vdc

Vdc

Adc

Collector鈥揈mitter Voltage

Collector鈥揃ase Voltage

Emitter鈥揃ase Voltage

5

Collector Current 鈥?Continuous

鈥?Peak

Base Current

10

15

250

mAdc

watts

W/_C

Total Device Dissipation @ TC = 25_C

Derate above 25_C

Total Device Dissipation @ TA = 25_C

Derate above 25_C

PD

PD

65

0.52

2

0.016

Watts

W/_C

_C

Operating and Storage Junction Temperature Range

TJ, Tstg

鈥?5 to +150

(1) Indicates JEDEC Registered Data.

漏

Semiconductor Components Industries, LLC, 2002

1

April, 2002 鈥?Rev. 4

Publication Order Number:

2N6667/D

next

2N6667AK相關(guān)型號(hào)PDF文件下載

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TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 5A I(C) | TO-3

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TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 3A I(C) | TO-3

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