Collector Current 鈥?/div>
Continuous
Total Device Dissipation
@ TA = 25擄C
Derate above 25擄C
Total Device Dissipation
@ TC = 25擄C
Derate above 25擄C
Operating and Storage
Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
6.0
5.0
IB
IC
PD
250
500
625
5.0
1.5
12
鈥?5 to +150
mAdc
mAdc
mW
mW/擄C
Watts
mW/擄C
擄C
2N6515
250
250
2N6517
2N6520
350
350
Unit
Vdc
Vdc
Vdc
NPN
2N6515
2N6517
PNP
2N6520
Voltage and current are negative
for PNP transistors
1
2
3
PD
CASE 29鈥?4, STYLE 1
TO鈥?2 (TO鈥?26AA)
TJ, Tstg
COLLECTOR
3
2
BASE
NPN
1
EMITTER
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
qJA
R
qJC
Max
200
83.3
Unit
擄C/W
擄C/W
COLLECTOR
3
2
BASE
PNP
1
EMITTER
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector鈥揈mitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
Collector鈥揃ase Breakdown Voltage
(IC = 100
碌A(chǔ)dc,
IE = 0 )
Emitter鈥揃ase Breakdown Voltage
(IE = 10
碌A(chǔ)dc,
IC = 0)
1. Pulse Test: Pulse Width
鈮?/div>
300
ms,
Duty Cycle
鈮?/div>
2.0%.
漏
Semiconductor Components Industries, LLC, 2001
V(BR)CEO
2N6515
2N6517, 2N6520
V(BR)CBO
2N6515
2N6517, 2N6520
V(BR)EBO
2N6515, 2N6517
2N6520
6.0
5.0
鈥?/div>
鈥?/div>
250
350
鈥?/div>
鈥?/div>
250
350
鈥?/div>
鈥?/div>
Vdc
Vdc
Vdc
1
October, 2001 鈥?Rev. 3
Publication Order Number:
2N6515/D
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2N6520RL相關(guān)型號(hào)PDF文件下載
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