2N6519
2N6519
High Voltage Transistor
鈥?Collector-Emitter Voltage: V
CEO
= -300V
鈥?Collector Dissipation: P
C
(max)=625mW
TO-92
1
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Derate above 25擄C
Junction Temperature
Storage Temperature
Parameter
1. Emitter 2. Base 3. Collector
Value
-300
-300
-5
-500
-250
625
5
150
-55 ~ 150
Units
V
V
V
mA
mA
W
mW/擄C
擄C
擄C
鈥?/div>
Refer to 2N6520 for graphs
Electrical Characteristics
T
a
=25擄C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
Parameter
Collector-Base Breakdown Voltage
* Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
Test Condition
I
C
= -100碌A(chǔ), I
E
=0
I
C
= -1mA, I
B
=0
I
E
= -10碌A(chǔ), I
C
=0
V
CB
= -200V, I
E
=0
V
EB
= -4V, I
C
=0
V
CE
= -10V, I
C
= -1mA
V
CE
= -10V, I
C
= -10mA
V
CE
= -10V, I
C
= -30mA
V
CE
= -10V, I
C
= -50mA
V
CE
= -10V, I
C
= -100mA
I
C
= -10mA, I
B
= -1mA
I
C
= -20mA, I
B
= -2mA
I
C
= -30mA, I
B
= -3mA
I
C
= -50mA, I
B
= -5mA
I
C
= -10mA, I
B
= -1mA
I
C
= -20mA, I
B
= -2mA
I
C
= -30mA, I
B
= -3mA
V
CE
= -10V, I
C
= -100mA
V
CE
= -20V, I
C
= -10mA, f=20MHz
V
CB
= -20V, I
E
=0, f=1MHz
V
EB
= -0.5V, I
C
=0, f=1MHz
V
BE
(off)= -2V, V
CC
= -100V
I
C
= -50mA, I
B1
= -10mA
40
30
45
45
40
20
Min.
-300
-300
-5
-50
-50
Max.
Units
V
V
V
nA
nA
270
200
-0.30
-0.35
-0.50
-1
-0.75
-0.85
-0.90
-2
200
6
100
200
V
V
V
V
V
V
V
V
MHz
pF
pF
ns
V
CE
(sat)
Collector-Emitter Saturation Voltage
V
BE
(sat)
Base-Emitter Saturation Voltage
V
BE
(on)
f
T
C
ob
C
EB
t
ON
Base-Emitter On Voltage
* Current Gain Bandwidth Product
Output Capacitance
Emitter-Base Capacitance
Turn On Time
t
OFF
Turn Off Time
V
CC
= -100V, I
C
= -50mA
I
B1
=I
B2
=10mA
3.5
ns
* Pulse Test: Pulse Width鈮?00碌s, Duty Cycle鈮?%
漏2003 Fairchild Semiconductor Corporation
Rev. B2, Jnauary 2003
1
2
3
