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2N6498 Datasheet

  • 2N6498

  • POWER TRANSISTORS NPN SILICON

  • 8頁

  • ONSEMI

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ON Semiconductor
)
High Voltage NPN Silicon
Power Transistors
. . . designed for high voltage inverters, switching regulators and
line鈥搊perated amplifier applications. Especially well suited for
switching power supply applications.
2N6497
5 AMPERE
POWER TRANSISTORS
NPN SILICON
250 VOLT
80 WATTS
鈥?/div>
High Collector鈥揈mitter Sustaining Voltage 鈥?/div>
VCEO(sus) = 250 Vdc (Min)
鈥?/div>
Excellent DC Current Gain
hFE = 10鈥?5 @ IC = 2.5 Adc
鈥?/div>
Low Collector鈥揈mitter Saturation Voltage @ IC = 2.5 Adc 鈥?/div>
VCE(sat) = 1.0 Vdc (Max)
4
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MAXIMUM RATINGS (1)
Rating
Symbol
VCEO
VCB
VEB
IC
IB
Value
250
350
6.0
5.0
10
2.0
Unit
Vdc
Vdc
Vdc
Adc
Adc
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
Collector Current 鈥?Continuous
鈥?Peak
Base Current
Total Power Dissipation @ TC = 25_C
Derate above 25_C
Operating and Storage Junction
Temperature Range
PD
80
0.64
Watts
W/_C
_C
TJ,Tstg
鈥?5 to +150
1
2
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
3
CASE 221A鈥?9
TO鈥?20AB
THERMAL CHARACTERISTICS
Characteristic
Symbol
R
胃JC
Max
Unit
Thermal Resistance, Junction to Case
1.56
_C/W
(1) Indicates JEDEC Registered Data.
漏
Semiconductor Components Industries, LLC, 2002
1
April, 2002 鈥?Rev. 11
Publication Order Number:
2N6497/D

2N6498相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
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    Silicon Controlled Rectifiers Reverse Blocking Thyristors
    ONSEMI
  • 英文版
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    ONSEMI [ON...
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  • 英文版
    TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 2A I(C) | TO-126VAR
    ETC
  • 英文版
    TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 2A I(C) | TO-126VAR
  • 英文版
    TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 4A I(C) | TO-126VAR
    ETC
  • 英文版
    TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 4A I(C) | TO-126VAR
  • 英文版
    Power Transistors
    CENTRAL
  • 英文版
    COMPLEMENTARY MEDIUM-POWER HIGH VOLTAGE POWER TRANSISTORS
    BOCA
  • 英文版
    POWER TRANSISTORS(35W)
    MOSPEC
  • 英文版
    COMPLEMENTARY MEDIUM-POWER HIGH VOLTAGE POWER TRANSISTORS
    BOCA [Boca...

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