2N6428A NPN Epitaxial Silicon Transistor
December 2006
2N6428A
NPN Epitaxial Silicon Transistor
Features
鈥?This device is designed for high gain, general purpose
amplifier applications at collector currents from 1uA to 200 mA.
tm
TO92
1 2 3
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings *
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Total Device Dissipation
Junction Temperature
Storage Temperature Range
T
a
= 25擄C unless otherwise noted
Parameter
Value
60
50
5
200
625
150
- 55 ~ 150
Unit
V
V
V
mA
mW
擄C
擄C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics*
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
T
C
= 25擄C unless otherwise noted
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Conditions
I
C
= 100碌A(chǔ), I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 100碌A(chǔ), I
C
= 0
V
CB
= 30V, I
E
= 0
V
BE
= 5V, I
C
= 0
V
CE
= 5V, I
C
= 0.01mA
V
CE
= 5V, I
C
= 0.1mA
V
CE
= 5V, I
C
= 1.0mA
V
CE
= 5V, I
C
= 10mA
I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5.0mA
V
CE
= 5V, I
C
= 1.0mA
I
C
= 1mA, V
CE
= 5.0V, f = 100MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
Min.
60
50
5
Max.
Units
V
V
V
10
10
250
250
250
250
0.2
0.6
0.56
100
0.66
700
3
650
650
nA
nA
V
CE
(sat)
V
BE
(on)
f
T
C
ob
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
V
V
V
MHz
pF
* DC Item are tested by Pulse Test: Pulse Width鈮?00us, Duty Cycle鈮?%
漏2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
2N6428A Rev. A
1
2
3
