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2N6399 Datasheet

  • 2N6399

  • SCRs 12 AMPERES RMS 50 thru 800 VOLTS

  • 6頁(yè)

  • MOTOROLA   MOTOROLA

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N6394/D
Silicon Controlled Rectifiers
Reverse Blocking Triode Thyristors
. . . designed primarily for half-wave ac control applications, such as motor controls,
heating controls and power supplies.
鈥?/div>
Glass Passivated Junctions with Center Gate Geometry for Greater Parameter
Uniformity and Stability
鈥?/div>
Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High
Heat Dissipation and Durability
鈥?/div>
Blocking Voltage to 800 Volts
A
Motorola preferred devices
2N6394
thru
2N6399
SCRs
12 AMPERES RMS
50 thru 800 VOLTS
G
K
CASE 221A-07
(TO-220AB)
STYLE 3
*MAXIMUM RATINGS
(TJ = 25擄C unless otherwise noted.)
Rating
Peak Repetitive Forward and Reverse Blocking Voltage(1)
(Gate Open, TJ = 鈥?0 to 125擄C)
2N6394
2N6395
2N6397
2N6398
2N6399
RMS On鈥揝tate Current (TC = 90擄C) (All Conduction Angles)
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave, 60 Hz, TJ = 125擄C)
Circuit Fusing (t = 8.3 ms)
Forward Peak Power
Forward Average Gate Power
Forward Peak Gate Current
Operating Junction Temperature Range
Storage Temperature Range
Symbol
VDRM, VRRM
50
100
400
600
800
IT(RMS)
ITSM
I2t
PGM
PG(AV)
IGM
TJ
Tstg
12
100
40
20
0.5
2
鈥?0 to +125
鈥?0 to +150
Amps
Amps
A2s
Watts
Watt
Amps
擄C
擄C
Value
Unit
Volts
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
*Indicates JEDEC Registered Data.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Symbol
R
胃JC
Max
2
Unit
擄C/W
REV 1
Motorola Thyristor Device Data
漏
Motorola, Inc. 1999
1

2N6399 產(chǎn)品屬性

  • ON Semiconductor

  • SCR

  • 100 A

  • 800 V

  • 0.01 mA

  • 2.2 V

  • 1.5 V

  • 30 mA

  • 50 mA

  • Through Hole

  • TO-220-3

  • Bulk

  • + 125 C

  • - 40 C

  • 500

2N6399相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠商
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  • 英文版
    TRANSISTOR | BJT | PNP | 75V V(BR)CEO | 10A I(C) | TO-3
    ETC
  • 英文版
    TRANSISTOR | BJT | PNP | 75V V(BR)CEO | 10A I(C) | TO-3
  • 英文版
    TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 300MA I(C) | TO-9
  • 英文版
    TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 300MA I(C) | TO-9
  • 英文版
    TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 300MA I(C) | TO-9
  • 英文版
    TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 5A I(C) | TO-3
    ETC
  • 英文版
    TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 5A I(C) | TO-3
  • 英文版
    TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 5A I(C) | TO-3
    ETC
  • 英文版
    TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 5A I(C) | TO-3
  • 英文版
    Power Transistors
    CENTRAL
  • 英文版
    PNP DARLINGTON POWER SILICON TRANSISTOR
    MICROSEMI
  • 英文版
    DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
    BOCA
  • 英文版
    POWER TRANSISTORS(8A, 75W)
    MOSPEC
  • 英文版
    Silicon NPN Power Transistors
    ISC [Incha...
  • 英文版
    DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
    BOCA [Boca...
  • 英文版
    POWER TRANSISTORS(8A, 75W)
    MOSPEC [Mo...
  • 英文版
    Power Transistors
    CENTRAL [C...
  • 英文版
    PNP DARLINGTON POWER SILICON TRANSISTOR
    MICROSEMI ...
  • 英文版
    Power Transistors
    CENTRAL
  • 英文版
    PNP DARLINGTON POWER SILICON TRANSISTOR
    MICROSEMI

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