鈮?/div>
1.0
ms,
T
C
= 90擄C)
Operating Junction Temperature Range
Storage Temperature Range
Symbol
V
DRM,
V
RRM
50
100
400
800
I
T(RMS)
I
TSM
I
2
t
P
GM
P
G(AV)
I
GM
T
J
T
stg
12
100
40
20
0.5
2.0
鈭?0 to +125
鈭?0 to +150
A
A
A
2
s
W
W
A
擄C
擄C
1
2
3
Value
Unit
V
http://onsemi.com
SCRs
12 AMPERES RMS
50 thru 800 VOLTS
G
A
K
MARKING
DIAGRAM
4
TO鈭?20AB
CASE 221A
STYLE 3
2N639xG
AYWW
2N639x = Device Code
x = 4, 5, 7, or 9
G
= Pb鈭扚ree Package
A
= Assembly Location
Y
= Year
WW
= Work Week
MAXIMUM RATINGS
鈥?(T
J
= 25擄C unless otherwise noted)
Rating
Thermal Resistance, Junction鈭抰o鈭扖ase
Maximum Lead Temperature for Soldering
Purposes 1/8鈥?from Case for 10 Seconds
Symbol
R
qJC
T
L
Max
2.0
260
Unit
擄C/W
擄C
1
2
3
4
PIN ASSIGNMENT
Cathode
Anode
Gate
Anode
鈥營(yíng)ndicates JEDEC Registered Data
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
*For additional information on our Pb鈭扚ree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
漏
Semiconductor Components Industries, LLC, 2006
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
Preferred
devices are recommended choices for future use
and best overall value.
1
August, 2006 鈭?Rev. 6
Publication Order Number:
2N6394/D
1
2
3
4
5
