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2N6073A Datasheet

  • 2N6073A

  • SENSITIVE GATE TRIAC 4.0 AMPS, 200 THRU 600 VOLTS

  • 2頁(yè)

  • CENTRAL

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2N6071, A, B
2N6073, A, B
2N6075, A, B
SENSITIVE GATE TRIAC
4.0 AMPS, 200 THRU 600 VOLTS
Central
TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N6071, A, B
series types are silicon sensitive gate triacs
designed for such applications as light dimmers,
motor controls, heating controls and power
supplies.
MARKING CODE: FULL PART NUMBER
TO-126 CASE
MAXIMUM RATINGS:
(TJ=25擄C unless otherwise noted)
SYMBOL
Peak Repetitive Off-State Voltage
RMS On-State Current (TC=85擄C)
Peak One Cycle Surge (60Hz, TJ=110擄C)
I
2
t Value for Fusing (t=8.3ms)
Peak Gate Power (TC=85擄C)
Average Gate Power (t=8.3ms, TC=85擄C)
Peak Gate Voltage (TC=85擄C)
Storage Temperature
Junction Temperature
Thermal Resistance
Thermal Resistance
Maximum Lead Temperature
VDRM, VRRM
IT(RMS)
ITSM
I
2
t
PGM
PG(AV)
VGM
Tstg
TJ
JC
JA
TL
2N6071
2N6071A
2N6071B
200
2N6073
2N6073A
2N6073B
400
4.0
30
3.7
10
0.5
5.0
-40 to +150
-40 to +110
3.5
75
260
2N6075
2N6075A
2N6075B
600
UNITS
V
A
A
A
2
s
W
W
V
擄C
擄C
擄C/W
擄C/W
擄C
ELECTRICAL CHARACTERISTICS:
(TC=25擄C unless otherwise noted)
SYMBOL
IDRM,
IDRM,
IGT
IGT
IGT
IGT
IGT
IGT
IGT
IGT
IH
IH
VGT
VGT
VTM
ton
dv/dt
IRRM
IRRM
TEST CONDITIONS
VD=Rated VDRM,
VD=Rated VDRM,
VRRM, TJ=25擄C
VRRM, TJ=110擄C
TYP MAX
10
2.0
30
-
30
-
60
-
60
-
30
70
2.0
2.5
2.0
1.5
5.0
A Series
TYP MAX
10
2.0
5.0
5.0
5.0
10
20
20
20
30
15
30
2.0
2.5
2.0
1.5
5.0
B Series
TYP MAX
10
2.0
3.0
3.0
3.0
5.0
15
15
15
20
15
30
2.0
2.5
2.0
1.5
5.0
UNITS
碌A(chǔ)
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
V
V
V
碌s
V/碌s
VD=12V, RL=100鈩? QUAD I, TJ=25擄C
VD=12V, RL=100鈩? QUAD II, TJ=25擄C
VD=12V, RL=100鈩? QUAD III, TJ=25擄C
VD=12V, RL=100鈩? QUAD IV, TJ=25擄C
VD=12V, RL=100鈩? QUAD I, TJ= -40擄C
VD=12V, RL=100鈩? QUAD II, TJ= -40擄C
VD=12V, RL=100鈩? QUAD III, TJ= -40擄C
VD=12V, RL=100鈩? QUAD IV, TJ= -40擄C
VD=12V, IT=1.0A, TJ=25擄C
VD=12V, IT=1.0A, TJ= -40擄C
VD=12V, RL=100鈩? TJ=25擄C, QUAD I, II, III, IV
VD=12V, RL=100鈩? TJ= -40擄C, QUAD I, II, III, IV
ITM=6.0A
ITM=14A, IGT=100mA
VD= Rated VDRM, ITM=5.7A, TJ=85擄C
R0 (27-April 2004)

2N6073A 產(chǎn)品屬性

  • ON Semiconductor

  • 雙向可控硅

  • 400 V

  • 30 A

  • 10 uA

  • 2.5 V

  • 10 mA

  • 15 mA

  • 2 V

  • Through Hole

  • TO-225-3

  • Box

  • + 110 C

  • - 40 C

  • 400 V

  • 500

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