Low Collector鈭扙mitter Saturation Voltage 鈭?/div>
V
CE(sat)
= 2.0 Vdc (Max) @ I
C
= 4.0 Adc 鈭?2N6043,44
= 2.0 Vdc (Max) @ I
C
= 3.0 Adc 鈭?2N6042, 2N6045
Monolithic Construction with Built鈭捍n Base鈭扙mitter Shunt Resistors
Epoxy Meets UL 94 V鈭? @ 0.125 in
ESD Ratings:
Human Body Model, 3B > 8000 V
Machine Model, C > 400 V
Pb鈭扚ree Packages are Available*
DARLINGTON, 8 AMPERES
COMPLEMENTARY SILICON
POWER TRANSISTORS
60 鈭?100 VOLTS, 75 WATTS
1
TO鈭?20AB
CASE 221A鈭?9
STYLE 1
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MAXIMUM RATINGS
(Note 1)
Rating
Collector鈭扙mitter Voltage
Symbol
V
CEO
Value
60
Unit
Vdc
2N6040
2N6043
2N6042
2N6045
100
60
Collector鈭払ase Voltage
2N6040
2N6043
2N6042
2N6045
V
CB
Vdc
100
5.0
8.0
16
Emitter鈭払ase Voltage
Collector Current
Base Current
V
EB
I
C
I
B
Vdc
Adc
Continuous
Peak
120
mAdc
W
W/擄C
擄C
Total Power Dissipation @ T
C
= 25擄C
Derate above 25擄C
Operating and Storage Junction
Temperature Range
P
D
75
0.60
T
J
, T
stg
鈥?5 to +150
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates JEDEC Registered Data.
*For additional information on our Pb鈭扚ree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
漏
Semiconductor Components Industries, LLC, 2006
MARKING DIAGRAM
2N604xG
AYWW
2N604x = Device Code
x = 0, 2, 3, or 5
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb鈭扚ree Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Preferred
devices are recommended choices for future use
and best overall value.
1
May, 2006 鈭?Rev. 7
Publication Order Number:
2N6040/D
1
2
3
4
5
6
