鈥?/div>
Monolithic Construction with Built鈥揑n Base鈥揈mitter Shunt Resistors
MAXIMUM RATINGS (1)
Rating
2N6040
2N6043
60
60
2N6040
2N6042
2N6043 *
NPN
2N6045*
*ON Semiconductor Preferred Device
DARLINGTON
8 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
60鈥?00 VOLTS
75 WATTS
PD, POWER DISSIPATION (WATTS)
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Symbol
VCEO
VCB
VEB
IC
IB
PD
2N6042
2N6045
100
100
Unit
Vdc
Vdc
Vdc
Adc
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
5.0
8.0
16
Collector Current 鈥?Continuous
Peak
Base Current
120
mAdc
Watts
W/_C
_C
Total Power Dissipation @ TC = 25_C
Derate above 25_C
Operating and Storage Junction,
Temperature Range
Characteristic
75
0.60
TJ, Tstg
鈥?5 to +150
4
1
2
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
3
THERMAL CHARACTERISTICS
Symbol
胃
JC
胃
JA
Max
57
Unit
CASE 221A鈥?9
TO鈥?20AB
Thermal Resistance, Junction to Case
1.67
_C/W
_C/W
Thermal Resistance, Junction to Ambient
(1) Indicates JEDEC Registered Data.
TA TC
4.0 80
3.0 60
TC
2.0 40
TA
1.0 20
0
0
0
20
40
60
80
100
T, TEMPERATURE (擄C)
120
140
160
Figure 1. Power Derating
Preferred
devices are ON Semiconductor recommended choices for future use and best overall value.
漏
Semiconductor Components Industries, LLC, 2002
1
April, 2002 鈥?Rev. 4
Publication Order Number:
2N6040/D
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