2N6036G Datasheet

IC型號：
2N6036G
PDF描述：
Plastic Darlington Complementary Silicon Power Transistors
文件大?。?/label>
86.23KB
PDF頁數(shù)：
6頁
芯片廠家：
ONSEMI

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(PNP) 2N6034, 2N6035,

2N6036; (NPN) 2N6038,

2N6039

Plastic Darlington

Complementary Silicon

Power Transistors

Plastic Darlington complementary silicon power transistors are

designed for general purpose amplifier and low鈭抯peed switching

applications.

Features

http://onsemi.com

鈥?/div>

ESD Ratings: Machine Model, C; > 400 V

Human Body Model, 3B; > 8000 V

鈥?/div>

Epoxy Meets UL 94 V鈭? @ 0.125 in

鈥?/div>

Pb鈭扚ree Packages are Available*

MAXIMUM RATINGS

Rating

Collector鈭扙mitter Voltage

2N6034

2N6035, 2N6038

2N6036, 2N6039

2N6034

2N6035, 2N6038

2N6036, 2N6039

Symbol

CEO

Value

5.0

4.0

8.0

100

320

1.5

鈥?65 to

+ 150

Unit

Vdc

4.0 AMPERES DARLINGTON

COMPLEMENTARY SILICON

POWER TRANSISTORS

40, 60, 80 VOLTS, 40 WATTS

TO鈭?25AA

CASE 77

STYLE 1

3 2

Collector鈭払ase Voltage

CBO

Vdc

MARKING DIAGRAM

Emitter鈭払ase Voltage

Collector Current

Base Current

Total Device Dissipation @ T

= 25擄C

Derate above 25擄C

Total Device Dissipation @ T

= 25擄C

Derate above 25擄C

Operating and Storage Junction

Temperature Range

Continuous

Peak

EBO

, T

stg

Vdc

Adc

Apk

mAdc

mW/擄C

擄C

2N603x

YWW

N603xG

= Year

= Work Week

= Device Code

x = 4, 5, 6, 8, 9

= Pb鈭扚ree Package

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction鈭抰o鈭扖ase

Thermal Resistance, Junction鈭抰o鈭扐mbient

Symbol

qJC

qJA

Max

3.12

83.3

Unit

擄C/W

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb鈭扚ree strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

漏

Semiconductor Components Industries, LLC, 2006

May, 2006 鈭?Rev. 13

Publication Order Number:

2N6035/D

標(biāo)準(zhǔn)包裝
500
類別
分離式半導(dǎo)體產(chǎn)品
家庭
晶體管(BJT) - 單路
系列
-
晶體管類型
PNP - 達林頓
電流 - 集電極 (Ic)（最大）
4A
電壓 - 集電極發(fā)射極擊穿（最大）
80V
Ib、Ic條件下的Vce飽和度（最大）
3V @ 40mA，4A
電流 - 集電極截止（最大）
100µA
在某 Ic、Vce 時的最小直流電流增益 (hFE)
750 @ 2A，3V
功率 - 最大
40W
頻率 - 轉(zhuǎn)換
-
安裝類型
通孔
封裝/外殼
TO-225AA，TO-126-3
供應(yīng)商設(shè)備封裝
TO225AA
包裝
散裝
其它名稱
2N6036GOS

2N6036G相關(guān)型號PDF文件下載

型號

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描述

廠商

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TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 500MA I(C) | TO-92VA...

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TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 500MA I(C) | TO-92VA...

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英文版

TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 500MA I(C) | TO-92VA...

2N6001
2N6002

英文版

TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 500MA I(C) | TO-92VA...

ETC

2N6002
2N6002

英文版

TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 500MA I(C) | TO-92VA...

2N6002
2N6003

英文版

TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 500MA I(C) | TO-92VA...

ETC

2N6003
2N6003

英文版

TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 500MA I(C) | TO-92VA...

2N6003
2N6004

英文版

TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 500MA I(C) | TO-92VA...

ETC

2N6004
2N6004

英文版

TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 500MA I(C) | TO-92VA...

2N6004
2N6005

英文版

TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 500MA I(C) | TO-92VA...

ETC

2N6005
2N6005

英文版

TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 500MA I(C) | TO-92VA...

2N6005
2N6006

英文版

TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 500MA I(C) | TO-92VA...

ETC

2N6006
2N6006

英文版

TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 500MA I(C) | TO-92VA...

2N6006
2N6007

英文版

TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 500MA I(C) | TO-92VA...

ETC

2N6007

2N6036G Datasheet

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