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2N6036G Datasheet

  • 2N6036G

  • Plastic Darlington Complementary Silicon Power Transistors

  • 6頁(yè)

  • ONSEMI

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(PNP) 2N6034, 2N6035,
2N6036; (NPN) 2N6038,
2N6039
Plastic Darlington
Complementary Silicon
Power Transistors
Plastic Darlington complementary silicon power transistors are
designed for general purpose amplifier and low鈭抯peed switching
applications.
Features
http://onsemi.com
鈥?/div>
ESD Ratings: Machine Model, C; > 400 V
Human Body Model, 3B; > 8000 V
鈥?/div>
Epoxy Meets UL 94 V鈭? @ 0.125 in
鈥?/div>
Pb鈭扚ree Packages are Available*
MAXIMUM RATINGS
Rating
Collector鈭扙mitter Voltage
2N6034
2N6035, 2N6038
2N6036, 2N6039
2N6034
2N6035, 2N6038
2N6036, 2N6039
Symbol
V
CEO
Value
40
60
80
40
60
80
5.0
4.0
8.0
100
40
320
1.5
12
鈥?65 to
+ 150
Unit
Vdc
4.0 AMPERES DARLINGTON
COMPLEMENTARY SILICON
POWER TRANSISTORS
40, 60, 80 VOLTS, 40 WATTS
TO鈭?25AA
CASE 77
STYLE 1
3 2
1
Collector鈭払ase Voltage
V
CBO
Vdc
MARKING DIAGRAM
Emitter鈭払ase Voltage
Collector Current
Base Current
Total Device Dissipation @ T
C
= 25擄C
Derate above 25擄C
Total Device Dissipation @ T
C
= 25擄C
Derate above 25擄C
Operating and Storage Junction
Temperature Range
Continuous
Peak
V
EBO
I
C
I
B
P
D
P
D
T
J
, T
stg
Vdc
Adc
Apk
mAdc
W
mW/擄C
W
mW/擄C
擄C
Y
WW
2N603x
G
YWW
2
N603xG
= Year
= Work Week
= Device Code
x = 4, 5, 6, 8, 9
= Pb鈭扚ree Package
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction鈭抰o鈭扖ase
Thermal Resistance, Junction鈭抰o鈭扐mbient
Symbol
R
qJC
R
qJA
Max
3.12
83.3
Unit
擄C/W
擄C/W
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb鈭扚ree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
漏
Semiconductor Components Industries, LLC, 2006
1
May, 2006 鈭?Rev. 13
Publication Order Number:
2N6035/D

2N6036G 產(chǎn)品屬性

  • 500

  • 分離式半導(dǎo)體產(chǎn)品

  • 晶體管(BJT) - 單路

  • -

  • PNP - 達(dá)林頓

  • 4A

  • 80V

  • 3V @ 40mA，4A

  • 100µA

  • 750 @ 2A，3V

  • 40W

  • -

  • 通孔

  • TO-225AA，TO-126-3

  • TO225AA

  • 散裝

  • 2N6036GOS

2N6036G相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
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    廠商
    下載
  • 英文版
    2 Amps, 600 Volts N-CHANNEL MOSFET
    UTC [Uniso...
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    600V N-Channel MOSFET
    FAIRCHILD
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    600V N-Channel MOSFET
    FAIRCHILD ...
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    2 Amps,􀀁600/650 Volts N-CHANNEL MOSFET
    UTC-IC
  • 英文版
    2 Amps,􀀁600/650 Volts N-CHANNEL MOSFET
    UTC [Uniso...
  • 英文版
    TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 500MA I(C) | TO-92VA...
    ETC
  • 英文版
    TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 500MA I(C) | TO-92VA...
  • 英文版
    TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 500MA I(C) | TO-92VA...
    ETC
  • 英文版
    TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 500MA I(C) | TO-92VA...
  • 英文版
    TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 500MA I(C) | TO-92VA...
    ETC
  • 英文版
    TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 500MA I(C) | TO-92VA...
  • 英文版
    TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 500MA I(C) | TO-92VA...
    ETC
  • 英文版
    TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 500MA I(C) | TO-92VA...
  • 英文版
    TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 500MA I(C) | TO-92VA...
    ETC
  • 英文版
    TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 500MA I(C) | TO-92VA...
  • 英文版
    TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 500MA I(C) | TO-92VA...
    ETC
  • 英文版
    TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 500MA I(C) | TO-92VA...
  • 英文版
    TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 500MA I(C) | TO-92VA...
    ETC
  • 英文版
    TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 500MA I(C) | TO-92VA...
  • 英文版
    TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 500MA I(C) | TO-92VA...
    ETC

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