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2N5884 Datasheet

  • 2N5884

  • Complementary Silicon High−Power Transistors

  • 95.38KB

  • 6頁

  • ONSEMI

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上傳產(chǎn)品規(guī)格書

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2N5883, 2N5884 (PNP)
2N5885, 2N5886 (NPN)
2N5884 and 2N5886 are Preferred Devices
Complementary Silicon
High鈭扨ower Transistors
Complementary silicon high鈭抪ower transistors are designed for
general鈭抪urpose power amplifier and switching applications.
Features
http://onsemi.com
鈥?/div>
Low Collector鈭扙mitter Saturation Voltage 鈭?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
V
CE(sat)
= 1.0 Vdc, (max) at I
C
= 15 Adc
Low Leakage Current
I
CEX
= 1.0 mAdc (max) at Rated Voltage
Excellent DC Current Gain 鈭?/div>
h
FE
= 20 (min) at I
C
= 10 Adc
High Current Gain Bandwidth Product 鈭?/div>
f
t
= 4.0 MHz (min) at I
C
= 1.0 Adc
Pb鈭扚ree Packages are Available*
25 AMPERE COMPLEMENTARY
SILICON POWER TRANSISTORS
60 鈭?80 VOLTS, 200 WATTS
MAXIMUM RATINGS
(Note 1)
Rating
TO鈭?04AA (TO鈭?)
CASE 1鈭?7
STYLE 1
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Symbol
V
CEO
Value
60
80
60
80
Unit
Vdc
Collector鈭扙mitter Voltage
2N5883, 2N5885
2N5884, 2N5886
Collector鈭払ase Voltage
2N5883, 2N5885
2N5884, 2N5886
V
CB
Vdc
Emitter鈭払ase Voltage
Collector Current 鈭?/div>
Continuous
Peak
Base Current
V
EB
I
C
5.0
25
50
Vdc
Adc
I
B
7.5
Adc
Total Device Dissipation @ T
C
= 25擄C
Derate above 25擄C
Operating and Storage Junction
Temperature Range
P
D
200
1.15
W
W/擄C
擄C
T
J
, T
stg
鈥?65 to + 200
MARKING DIAGRAM
2N588xG
AYYWW
MEX
2N588x
G
A
YY
WW
MEX
THERMAL CHARACTERISTICS
Characteristic
Symbol
q
JC
Max
Unit
= Device Code
x = 3, 4, 5, or 6
= Pb鈭扚ree Package
= Assembly Location
= Year
= Work Week
= Country of Origin
Thermal Resistance, Junction鈭抰o鈭扖ase
0.875
擄C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates JEDEC registered data. Units and conditions differ on some
parameters and re鈭抮egistration reflecting these changes has been requested.
All above values most or exceed present JEDEC registered data.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Preferred
devices are recommended choices for future use
and best overall value.
*For additional information on our Pb鈭扚ree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
漏
Semiconductor Components Industries, LLC, 2006
1
March, 2006 鈭?Rev. 11
Publication Order Number:
2N5883/D

2N5884 產(chǎn)品屬性

  • 100

  • 分離式半導(dǎo)體產(chǎn)品

  • 晶體管(BJT) - 單路

  • -

  • PNP

  • 25A

  • 80V

  • 4V @ 6.25A，25A

  • 2mA

  • 20 @ 10A，4V

  • 200W

  • 4MHz

  • 通孔

  • TO-204AA，TO-3

  • TO-3

  • 托盤

  • 2N5884OS

2N5884相關(guān)型號PDF文件下載

  • 型號
    版本
    描述
    廠商
    下載
  • 英文版
    TRANSISTOR | BJT | PNP | 15V V(BR)CEO | 400MA I(C) | TO-5
  • 英文版
    TRANSISTOR | BJT | PNP | 15V V(BR)CEO | 100MA I(C) | TO-5
    ETC
  • 英文版
    TRANSISTOR | BJT | PNP | 15V V(BR)CEO | 100MA I(C) | TO-5
  • 英文版
    TRANSISTOR | BJT | PNP | 14V V(BR)CEO | 100MA I(C) | TO-5
    ETC
  • 英文版
    TRANSISTOR | BJT | PNP | 14V V(BR)CEO | 100MA I(C) | TO-5
  • 英文版
    TRANSISTOR | BJT | NPN | 24V V(BR)CEO | 200MA I(C) | TO-1
    ETC
  • 英文版
    TRANSISTOR | BJT | NPN | 24V V(BR)CEO | 200MA I(C) | TO-1
  • 英文版
    TRANSISTOR | BJT | PNP | 250MA I(C) | TO-45(3)
    ETC
  • 英文版
    TRANSISTOR | BJT | PNP | 250MA I(C) | TO-45(3)
  • 英文版
    TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 200MA I(C) | TO-5
    ETC
  • 英文版
    TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 200MA I(C) | TO-5
  • 英文版
    TRANSISTOR | BJT | PNP | 15V V(BR)CEO | 50MA I(C) | TO-30
    ETC
  • 英文版
    TRANSISTOR | BJT | PNP | 15V V(BR)CEO | 50MA I(C) | TO-30
  • 英文版
    TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 5A I(C) | TO-3
    ETC
  • 英文版
    Bipolar NPN Device in a Hermetically sealed TO3 Metal Packag...
    SEME-LAB
  • 英文版
    Silicon NPN Power Transistors
    ISC [Incha...
  • 英文版
    Silicon NPN Power Transistors
    SAVANTIC [...
  • 英文版
    Bipolar NPN Device in a Hermetically sealed TO3 Metal Packag...
    SEME-LAB [...
  • 英文版
    TRANSISTOR | BJT | NPN | 375V V(BR)CEO | 5A I(C) | TO-3
    ETC
  • 英文版
    Silicon NPN Power Transistors
    ISC [Incha...

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