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2N5639G Datasheet

  • 2N5639G

  • JFET Chopper Transistors N-Channel - Depletion

  • 3頁

  • ONSEMI

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2N5638, 2N5639
2N5638 is a Preferred Device
JFET Chopper Transistors
N鈭扖hannel 鈭?Depletion
N鈭扖hannel Junction Field Effect Transistors, depletion mode
(Type A) designed for chopper and high鈭抯peed switching applications.
Features
鈥?/div>
Low Drain鈭扴ource 鈥淥N鈥?Resistance: RDS(on) = 30W for 2N5638
RDS(on) = 60W for 2N5639
http://onsemi.com
1 DRAIN
鈥?/div>
Low Reverse Transfer Capacitance 鈭?/div>
C
rss
= 4.0 pF (Max) @ f = 1.0 MHz
鈥?/div>
Fast Switching Characteristics 鈭?t
r
= 5.0 ns (Max) (2N5638)
鈥?/div>
Pb鈭扚ree Packages are Available*
MAXIMUM RATINGS
Rating
Drain 鈭扴ource Voltage
Drain 鈭扜ate Voltage
Reverse Gate 鈭扴ource Voltage
Forward Gate Current
Total Device Dissipation
@ T
A
= 25擄C
Derate above 25擄C
Storage Temperature Range
Operating Junction Temp Range
Symbol
V
DS
V
DG
V
GSR
I
GF
P
D
310
2.82
T
stg
T
J
鈭?5 to +150
鈭?5 to +135
mW
mW/擄C
擄C
擄C
12
3
Value
30
30
30
10
Unit
Vdc
Vdc
Vdc
mAdc
3
GATE
2 SOURCE
MARKING
DIAGRAM
TO鈭?2
CASE 29
STYLE 5
2N
563x
AYWW
G
G
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
V
DD
= 10 Vdc
50
0.1
mF
TO
50
W
SCOPE B
0.001
mF
+
鈭?/div>
V
RL
+
DD
*
(RDS(on)
)
50)
ID
PULSE
GENERATOR
INPUT
(SCOPE A)
10%
90%
t
d(on)
t
f
t
d(off)
90%
10%
OUTPUT
(SCOPE B)
50
x = 8 or 9
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb鈭扚ree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
2N5638RLRA
2N5638RLRAG
Package
TO鈭?2
TO鈭?2
(Pb鈭扚ree)
TO鈭?2
TO鈭?2
(Pb鈭扚ree)
TO鈭?2
TO鈭?2
(Pb鈭扚ree)
Shipping
鈥?/div>
2000/Tape & Reel
2000/Tape & Reel
1000 Units/Box
1000 Units/Box
2000/Tape & Reel
2000/Tape & Reel
R
L
V
GS(on)
V
GS(off)
1.0 k
t
r
50
50
W
TO
50
W
SCOPE A
SCOPE
TEKTRONIX 567A
OR EQUIVALENT
2N5639
2N5639G
2N5369RLRA
2N5369RLRAG
Figure 1. Switching Times Test Circuit
*For additional information on our Pb鈭扚ree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2006
鈥燜or information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred
devices are recommended choices for future use
and best overall value.
1
March, 2006 鈭?Rev. 4
Publication Order Number:
2N5638/D

2N5639G 產(chǎn)品屬性

  • 1,000

  • 分離式半導體產(chǎn)品

  • JFET(結(jié)點場效應

  • -

  • 25mA @ 20V

  • 30V

  • -

  • N 溝道

  • 35V

  • -

  • 10pF @ 12V(VGS)

  • 60 歐姆

  • 通孔

  • 散裝

  • TO-226-3、TO-92-3 標準主體

  • TO-92-3

  • 310mW

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