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2N5631 Datasheet

  • 2N5631

  • POWER TRANSISTORS COMPLEMENTARY SILICON

  • 8頁(yè)

  • ONSEMI

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ON Semiconductort
NPN
PNP
High-Voltage - High Power
Transistors
. . . designed for use in high power audio amplifier applications and
high voltage switching regulator circuits.
2N5631
2N6031
16 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
140 VOLTS
200 WATTS
鈥?/div>
High Collector Emitter Sustaining Voltage 鈥?/div>
V
CEO(sus)
= 140 Vdc
鈥?/div>
High DC Current Gain 鈥?@ I
C
= 8.0 Adc
h
FE
= 15 (Min)
鈥?/div>
Low Collector鈥揈mitter Saturation Voltage 鈥?/div>
V
CE(sat)
= 1.0 Vdc (Max) @ I
C
= 10 Adc
MAXIMUM RATINGS (1)
Rating
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
Symbol
V
CEO
V
CB
V
EB
I
C
I
B
PD, POWER DISSIPATION (WATTS)
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Value
140
140
7.0
16
20
Unit
Vdc
Vdc
Vdc
Adc
Adc
Collector Current 鈥?Continuous
Peak
Base Current 鈥?Continuous
5.0
Total Device Dissipation @ T
C
= 25_C
Derate above 25_C
Operating and Storage Junction
Temperature Range
P
D
200
1.14
Watts
W/_C
_C
T
J
, T
stg
鈥?5 to +200
CASE 1鈥?7
TO鈥?04AA
(TO鈥?)
THERMAL CHARACTERISTICS (1)
Characteristic
Thermal Resistance, Junction to Case
Symbol
胃
JC
Max
Unit
0.875
_C/W
(1) Indicates JEDEC Registered Data.
200
150
100
50
0
0
20
40
60
80
100 120 140
T
C
, TEMPERATURE (擄C)
160
180
200
Figure 1. Power Derating
Safe Area Curves are indicated by Figure 5. All Limits are applicable and must be observed.
漏
Semiconductor Components Industries, LLC, 2001
1
May, 2001 鈥?Rev. 0
Publication Order Number:
2N5631/D

2N5631 產(chǎn)品屬性

  • ON Semiconductor

  • Transistors Bipolar (BJT)

  • NPN

  • 140 V

  • 7 V

  • 16 A

  • 15

  • Single

  • 1 MHz

  • + 150 C

  • Through Hole

  • TO-204-2 (TO-3)

  • Tray

  • 16 A

  • - 65 C

  • 200 W

  • 100

2N5631相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠商
    下載
  • 英文版
    TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 100MA I(C) | TO-29
    ETC
  • 英文版
    TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 100MA I(C) | TO-29
  • 英文版
    TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 5A I(C) | TO-3
    ETC
  • 英文版
    TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 5A I(C) | TO-3
  • 英文版
    Bipolar PNP Device in a Hermetically sealed TO66 Metal Packa...
    SEME-LAB
  • 英文版
    Silicon NPN Power Transistors
    ISC [Incha...
  • 英文版
    Silicon NPN Power Transistors
    SAVANTIC [...
  • 英文版
    Bipolar PNP Device in a Hermetically sealed TO66 Metal Packa...
    SEME-LAB [...
  • 英文版
    Bipolar PNP Device in a Hermetically sealed TO66 Metal Packa...
    SEME-LAB
  • 英文版
    Silicon PNP Power Transistors
    ISC [Incha...
  • 英文版
    Silicon PNP Power Transistors
    SAVANTIC [...
  • 英文版
    Bipolar PNP Device in a Hermetically sealed TO66 Metal Packa...
    SEME-LAB [...
  • 英文版
    TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 2A I(C) | TO-66
    ETC
  • 英文版
    Bipolar NPN Device in a Hermetically sealed TO66 Metal Packa...
    SEME-LAB
  • 英文版
    Silicon NPN Power Transistors
    ISC [Incha...
  • 英文版
    Silicon NPN Power Transistors
    SAVANTIC [...
  • 英文版
    Bipolar NPN Device in a Hermetically sealed TO66 Metal Packa...
    SEME-LAB [...
  • 英文版
    Bipolar PNP Device in a Hermetically sealed TO66 Metal Packa...
    SEME-LAB
  • 英文版
    Silicon PNP Power Transistors
    ISC [Incha...
  • 英文版
    Silicon PNP Power Transistors
    SAVANTIC [...

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