MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N5550/D
Amplifier Transistors
NPN Silicon
2N5550
2N5551*
*Motorola Preferred Device
COLLECTOR
3
2
BASE
1
EMITTER
1
2
MAXIMUM RATINGS
Rating
Collector 鈥?Emitter Voltage
Collector 鈥?Base Voltage
Emitter 鈥?Base Voltage
Collector Current 鈥?Continuous
Total Device Dissipation @ TA = 25擄C
Derate above 25擄C
Total Device Dissipation @ TC = 25擄C
Derate above 25擄C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
PD
TJ, Tstg
2N5550 2N5551
140
160
6.0
600
625
5.0
1.5
12
鈥?55 to +150
160
180
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/擄C
Watts
mW/擄C
擄C
3
CASE 29鈥?4, STYLE 1
TO鈥?2 (TO鈥?26AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA
R
q
JC
Max
200
83.3
Unit
擄C/W
擄C/W
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector 鈥?Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
Collector 鈥?Base Breakdown Voltage
(IC = 100
碌Adc,
IE = 0 )
Emitter 鈥?Base Breakdown Voltage
(IE = 10
碌Adc,
IC = 0)
Collector Cutoff Current
(VCB = 100 Vdc, IE = 0)
(VCB = 120 Vdc, IE = 0)
(VCB = 100 Vdc, IE = 0, TA = 100擄C)
(VCB = 120 Vdc, IE = 0, TA = 100擄C)
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
1. Pulse Test: Pulse Width = 300
m
s, Duty Cycle = 2.0%.
Preferred
devices are Motorola recommended choices for future use and best overall value.
V(BR)CEO
2N5550
2N5551
V(BR)CBO
2N5550
2N5551
V(BR)EBO
ICBO
2N5550
2N5551
2N5550
2N5551
IEBO
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
100
50
100
50
50
160
180
6.0
鈥?/div>
鈥?/div>
鈥?/div>
140
160
鈥?/div>
鈥?/div>
Vdc
Vdc
Vdc
nAdc
碌Adc
nAdc
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1996
1
2N5550 產(chǎn)品屬性
5,000
分離式半導體產(chǎn)品
晶體管(BJT) - 單路
-
NPN
600mA
140V
250mV @ 5mA，50mA
-
60 @ 10mA，5V
625mW
300MHz
通孔
TO-226-3、TO-92-3 標準主體
TO-92-3
散裝
2N5550OS
2N5550相關(guān)型號PDF文件下載
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型號
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描述
廠商
下載
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英文版
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 800MA I(C) | TO-5
ETC
-
英文版
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 800MA I(C) | TO-5
-
英文版
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 200MA I(C) | TO-5
ETC
-
英文版
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 200MA I(C) | TO-5
-
英文版
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 200MA I(C) | TO-5
ETC
-
英文版
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 200MA I(C) | TO-5
-
英文版
TRANSISTOR | BJT | PNP | 4A I(C) | TO-3
ETC
-
英文版
TRANSISTOR | BJT | PNP | 4A I(C) | TO-3
-
英文版
TRANSISTOR | BJT | PNP | 16V V(BR)CEO | 3A I(C) | TO-3
-
英文版
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 3A I(C) | TO-3
ETC
-
英文版
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 3A I(C) | TO-3
-
英文版
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DUAL N CHANNEL JFET LOW NOISE AMPLIFIER
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