2N5088 / MMBT5088 / 2N5089 / MMBT5089
Discrete POWER & Signal
Technologies
2N5088
2N5089
MMBT5088
MMBT5089
C
E
C
B
TO-92
E
SOT-23
Mark: 1Q / 1R
B
NPN General Purpose Amplifier
This device is designed for low noise, high gain, general purpose
amplifier applications at collector currents from 1碌A(chǔ) to 50 mA.
Sourced from Process 07.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25擄C unless otherwise noted
Parameter
2N5088
2N5089
2N5088
2N5089
Value
30
25
35
30
4.5
100
-55 to +150
Units
V
V
V
V
V
mA
擄C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
TA = 25擄C unless otherwise noted
Characteristic
2N5088
2N5089
625
5.0
83.3
200
Max
*MMBT5088
*MMBT5089
350
2.8
357
Units
P
D
R
胃JC
R
胃
JA
Total Device Dissipation
Derate above 25擄C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
mW
mW/擄C
擄C/W
擄C/W
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
漏
1997 Fairchild Semiconductor Corporation