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2N5088_07 Datasheet

  • 2N5088_07

  • Amplifier Transistors NPN Silicon

  • 189.00KB

  • 6頁

  • ONSEMI

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UTC 2N5088/2N5089 NPN EPITAXIAL SILICON TRANSISTOR
NPN GENERAL PURPOSE AMPLIFIER
DESCRIPTION
The device is designed for low noise, high gain, general
purpose amplifier applications at collector currents from
1碌A(chǔ) to 50mA.
1
TO-92
1:EMITTER
2:BASE
3:COLLECTOR
MAXIMUM RATINGS
(TA=25擄C, unless otherwise noted)
RATING
SYMBOL
2N5088
2N5089
UNIT
Collector-Emitter voltage
V
CEO
30
25
V
Collector-Base voltage
V
CBO
35
30
V
Emitter-base voltage
V
EBO
4.5
V
Collector current-continuous
Ic
100
mA
Operating and Storage
T
j,
T
stg
-55 ~ +150
擄C
Junction Temperature Range
Note 1: These ratings are based on a maximum junction temperature of 150 degrees C.
Note 2: These are steady state limits. The factory should be consulted on applications involving pulsed or low duty
cycle operations.
THERMAL CHARACTERISTICS
(TA=25擄C, unless otherwise noted)
PARAMETER
Total Device Dissipation
Derate above 25擄C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to
Ambient
SYMBOL
P
D
R
胃JC
R
胃JA
MAX
625
5
83.3
200
UNIT
mW
mW/擄C
擄C/W
擄C/W
UTC
UNISONIC TECHNOLOGIES CO., LTD.
1
QW-R201-040,A

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