MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N5087/D
Amplifier Transistor
PNP Silicon
COLLECTOR
3
2
BASE
1
EMITTER
2N5087
Motorola Preferred Device
1
2
3
MAXIMUM RATINGS
Rating
Collector 鈥?Emitter Voltage
Collector 鈥?Base Voltage
Emitter 鈥?Base Voltage
Collector Current 鈥?Continuous
Total Device Dissipation @ TA = 25擄C
Derate above 25擄C
Total Device Dissipation @ TC = 25擄C
Derate above 25擄C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
PD
TJ, Tstg
Value
50
50
3.0
50
625
5.0
1.5
12
鈥?55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/擄C
Watts
mW/擄C
擄C
CASE 29鈥?4, STYLE 1
TO鈥?2 (TO鈥?26AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA
R
q
JC
Max
200
83.3
Unit
擄C/W
擄C/W
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector 鈥?Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
Collector 鈥?Base Breakdown Voltage
(IC = 100
碌A(chǔ)dc,
IE = 0)
Collector Cutoff Current
(VCB = 35 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
1. Pulse Test: Pulse Width
鈮?/div>
300
m
s, Duty Cycle
鈮?/div>
2.0%.
V(BR)CEO
V(BR)CBO
ICBO
IEBO
50
50
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
50
50
Vdc
Vdc
nAdc
nAdc
Preferred
devices are Motorola recommended choices for future use and best overall value.
(Replaces 2N5086/D)
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1997
1
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MOTOROLA
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