MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N4264/D
General Purpose Transistor
NPN Silicon
COLLECTOR
3
2
BASE
1
EMITTER
2N4264
1
2
3
MAXIMUM RATINGS
Rating
Collector 鈥?Emitter Voltage
Collector 鈥?Base Voltage
Emitter 鈥?Base Voltage
Collector Current 鈥?Continuous
Total Device Dissipation @ TA = 25擄C
Derate above 25擄C
Total Device Dissipation @ TC = 25擄C
Derate above 25擄C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
PD
TJ, Tstg
Value
15
30
6.0
200
350
2.8
1.0
8.0
鈥?55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/擄C
Watts
mW/擄C
擄C
CASE 29鈥?4, STYLE 1
TO鈥?2 (TO鈥?26AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA
R
q
JC
Max
357
125
Unit
擄C/W
擄C/W
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector 鈥?Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
Collector 鈥?Base Breakdown Voltage
(IC = 10
m
Adc, IE = 0)
Emitter 鈥?Base Breakdown Voltage
(IE = 10
m
Adc, IC = 0)
Base Cutoff Current
(VCE = 12 Vdc, VEB(off) = 0.25 Vdc)
(VCE = 12 Vdc, VEB(off) = 0.25 Vdc, TA = 100擄C)
Collector Cutoff Current
(VCE = 12 Vdc, VEB(off) = 0.25 Vdc)
V(BR)CEO
15
V(BR)CBO
30
V(BR)EBO
6.0
IBEV
鈥?/div>
鈥?/div>
ICEX
鈥?/div>
100
0.1
10
nAdc
鈥?/div>
碌A(chǔ)dc
鈥?/div>
Vdc
鈥?/div>
Vdc
Vdc
REV 2
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1997
1
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