MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N4123/D
General Purpose Transistors
NPN Silicon
COLLECTOR
3
2
BASE
1
EMITTER
2N4123
2N4124
1
2
3
MAXIMUM RATINGS
Rating
Collector 鈥?Emitter Voltage
Collector 鈥?Base Voltage
Emitter 鈥?Base Voltage
Collector Current 鈥?Continuous
Total Device Dissipation @ TA = 25擄C
Derate above 25擄C
Total Device Dissipation @ TC = 25擄C
Derate above 25擄C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
PD
TJ, Tstg
2N4123 2N4124
30
40
5.0
200
625
5.0
1.5
12
鈥?55 to +150
25
30
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/擄C
Watts
mW/擄C
擄C
CASE 29鈥?4, STYLE 1
TO鈥?2 (TO鈥?26AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA
R
q
JC
Max
200
83.3
Unit
擄C/W
擄C/W
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector 鈥?Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IE = 0)
Collector 鈥?Base Breakdown Voltage
(IC = 10
m
Adc, IE = 0)
Emitter 鈥?Base Breakdown Voltage
(IE = 10
m
Adc, IC = 0)
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
1. Pulse Test: Pulse Width = 300
m
s, Duty Cycle = 2.0%.
V(BR)CEO
2N4123
2N4124
V(BR)CBO
2N4123
2N4124
V(BR)EBO
ICBO
IEBO
40
30
5.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
50
50
Vdc
nAdc
nAdc
30
25
鈥?/div>
鈥?/div>
Vdc
Vdc
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1996
1
2N4123 產(chǎn)品屬性
Fairchild Semiconductor
NPN
30 V
5 V
0.2 A
50
Single
250 MHz
+ 150 C
Through Hole
TO-92
0.2 A
- 55 C
625 mW
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