2N3906 / MMBT3906 / PZT3906
2N3906
MMBT3906
C
PZT3906
C
E
C
B
E
C
TO-92
E
SOT-23
Mark: 2A
B
SOT-223
B
PNP General Purpose Amplifier
This device is designed for general purpose amplifier and switching
applications at collector currents of 10
碌A
to 100 mA.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
T
A
= 25擄C unless otherwise noted
Parameter
Value
40
40
5.0
200
-55 to +150
Units
V
V
V
mA
擄C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3)
All voltages (V) and currents (A) are negative polarity for PNP transistors.
Thermal Characteristics
Symbol
P
D
R
胃JC
R
胃JA
T
A
= 25擄C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25擄C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
2N3906
625
5.0
83.3
200
Max
*MMBT3906
350
2.8
357
**PZT3906
1,000
8.0
125
Units
mW
mW/擄C
擄C/W
擄C/W
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
**
Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm
2
.
錚?/div>
2001 Fairchild Semiconductor Corporation
2N3906/MMBT3906/PZT3906, Rev A
1
2
3
4
5
6
