鈥?/div>
omponents
21201 Itasca Street Chatsworth
!"#
$% !"#
2N3904
Through Hole Package
Capable of 600mWatts of Power Dissipation
Pin Configuration
Bottom View
NPN General
Purpose Amplifier
TO-92
A
E
C
B
E
Electrical Characteristics @ 25擄C Unless Otherwise Specified
Symbol
Parameter
Collector-Emitter Breakdown Voltage*
(I
C
=1.0mAdc, I
B
=0)
Collector-Base Breakdown Voltage
(I
C
=10碌A(chǔ)dc, I
E
=0)
Emitter-Base Breakdown Voltage
(I
E
=10碌A(chǔ)dc, I
C
=0)
Base Cutoff Current
(V
CE
=30Vdc, V
BE
=3.0Vdc)
Collector Cutoff Current
(V
CE
=30Vdc, V
BE
=3.0Vdc)
DC Current Gain*
(I
C
=0.1mAdc, V
CE
=1.0Vdc)
(I
C
=1.0mAdc, V
CE
=1.0Vdc)
(I
C
=10mAdc, V
CE
=1.0Vdc)
(I
C
=50mAdc, V
CE
=1.0Vdc)
(I
C
=100mAdc, V
CE
=1.0Vdc)
Collector-Emitter Saturation Voltage
(I
C
=10mAdc, I
B
=1.0mAdc)
(I
C
=50mAdc, I
B
=5.0mAdc)
Base-Emitter Saturation Voltage
(I
C
=10mAdc, I
B
=1.0mAdc)
(I
C
=50mAdc, I
B
=5.0mAdc)
Current Gain-Bandwidth Product
(I
C
=10mAdc, V
CE
=20Vdc, f=100MHz)
Output Capacitance
(V
CB
=5.0Vdec, I
E
=0, f=1.0MHz)
Input Capacitance
(V
BE
=0.5Vdc, I
C
=0, f=1.0MHz)
Noise Figure
(I
C
=100碌A(chǔ)dc, V
CE
=5.0Vdc, R
S
=1.0k鈩?/div>
f=10Hz to 15.7kHz)
Delay Time
(V
CC
=3.0Vdc, V
BE
=0.5Vdc
Rise Time
I
C
=10mAdc, I
B1
=1.0mAdc)
Storage Time
(V
CC
=3.0Vdc, I
C
=10mAdc
Fall Time
I
B1
=I
B2
=1.0mAdc)
鈮?/div>
300碌s, Duty Cycle
鈮?/div>
2.0%
Min
40
60
6.0
50
50
Max
Units
Vdc
Vdc
Vdc
nAdc
nAdc
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
BL
I
CEX
B
ON CHARACTERISTICS
h
FE
40
70
100
60
30
C
300
V
CE(sat)
0.2
0.3
0.65
0.85
0.95
Vdc
D
V
BE(sat)
Vdc
SMALL-SIGNAL CHARACTERISTICS
f
T
C
obo
C
ibo
NF
300
4.0
8.0
5.0
MHz
G
pF
pF
dB
DIM
A
B
C
D
E
G
INCHES
MIN
.175
.175
.500
.016
.135
.095
DIMENSIONS
MM
MIN
4.45
4.46
12.7
0.41
3.43
2.42
SWITCHING CHARACTERISTICS
t
d
t
r
t
s
t
f
*Pulse Width
35
35
200
50
ns
ns
ns
ns
MAX
.185
.185
---
.020
.145
.105
MAX
4.70
4.70
---
0.63
3.68
2.67
NOTE
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