2MBI300N-120-01
1200V / 300A 2 in one-package
Features
路 VCE(sat) classified for easy parallel connection
路 High speed switching
路 Voltage drive
路 Low inductance module structure
IGBT Module
Applications
路 Inverter for Motor drive
路 AC and DC Servo drive amplifier
路 Uninterruptible power supply
路 Industrial machines, such as Welding machines
Equivalent Circuit Schematic
C2E1
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25擄C unless otherwise specified)
Item
Collector-Emitter voltage
Gate-Emitter voltage
Collector Continuous
current
1ms
1ms
Max. power dissipation
Operating temperature
Storage temperature
Isolation voltage
Screw torque
Symbol
V
CES
V
GES
I
C
I
C
pulse
-I
C
-I
C
pulse
P
C
T
j
T
stg
V
is
Mounting *
1
Terminals *
2
Rating
1200
鹵20
300
600
300
600
2100
+150
-40 to +125
AC 2500 (1min.)
3.5
4.5
Unit
V
V
A
A
A
A
W
擄C
擄C
V
N路m
N路m
隴
C1
E2
隴
G1
E1
G2
隴 Current control circuit
E2
V
CE(sat)
classification
Rank
F
A
B
C
D
E
Conditions
Lenge
2.25 to 2.50V
2.40 to 2.65V
2.55 to 2.80V
2.70 to 2.95V
2.85 to 3.10V
3.00 to 3.30V
Unit
mA
碌A(chǔ)
V
V
pF
Conditions
Ic = 300A
V
GE
= 15V
Tj = 25擄C
*
1 :
Recommendable value : 2.5 to 3.5N路m (M5) or (M6)
*
2 :
Recommendable value : 3.5 to 4.5N路m (M6)
Electrical characteristics (at Tj=25擄C unless otherwise specified)
Item
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Symbol
I
CES
I
GES
V
GE(th)
Characteristics
Min.
鈥?/div>
鈥?/div>
4.5
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Typ.
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
48000
17400
15480
鈥?/div>
0.25
鈥?/div>
0.35
鈥?/div>
鈥?/div>
Max.
3.0
45
7.5
3.3
鈥?/div>
鈥?/div>
鈥?/div>
1.2
0.6
1.5
0.5
3.0
0.35
V
GE
=0V, V
CE
=1200V
V
CE
=0V, V
GE
=鹵20V
V
CE
=20V, I
C
=300mA
V
GE
=15V, I
C
=300A
V
GE
=0V
V
CE
=10V
f=1MHz
V
CC
=600V
I
C
=300A
V
GE
=鹵15V
R
G
=2.7ohm
I
F
=300A, V
GE
=0V
I
F
=300A
Collector-Emitter saturation voltage V
CE(sat)
C
ies
Input capacitance
C
oes
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
Diode forward on voltage
Reverse recovery time
C
res
t
on
t
r
t
off
t
f
V
F
t
rr
碌s
V
碌s
Thermal resistance characteristics
Item
Symbol
Rth(j-c)
Rth(j-c)
Rth(c-f)*
Characteristics
Min.
Thermal resistance
鈥?/div>
鈥?/div>
鈥?/div>
Typ.
鈥?/div>
鈥?/div>
0.0167
Max.
0.06
0.15
鈥?/div>
IGBT
Diode
the base to cooling fin
擄C/W
擄C/W
擄C/W
Conditions
Unit
* : This is the value which is defined mounting on the additional cooling fin with thermal compound
2MBI300N-120-01相關(guān)型號PDF文件下載
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英文版
IGBT MODULE ( S-Series ) 2-Pack IGBT 1200V 2X75A
FUJI
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英文版
IGBT MODULE ( S-Series ) 2-Pack IGBT 1200V 2X75A
FUJI [Fuji...
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英文版
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CE...
ETC
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英文版
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CE...
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英文版
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES...
ETC
-
英文版
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES...
-
英文版
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CE...
ETC
-
英文版
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CE...
-
英文版
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES...
ETC
-
英文版
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES...
-
英文版
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES...
ETC
-
英文版
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES...
-
英文版
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CE...
ETC
-
英文版
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CE...
-
英文版
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES...
ETC
-
英文版
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES...
-
英文版
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CE...
ETC
-
英文版
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CE...
-
英文版
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES...
ETC
-
英文版
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES...
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