鈥?/div>
TWO EIGHT DIODE CORE DRIVER
trr < 20 ns
RUGGED AIR-ISOLATED CONSTRUCTION
LOW REVERSE LEAKAGE CURRENT
A
J
J
J
J
.061"
Absolute Maximum Ratings:
C
C
A
.054"
Symbol
Parameter
Limit
60
300
500
-65 to +150
-65 to +200
Unit
Vdc
mAdc
mAdc
擄C
擄C
J
J
J
J
VBR(R) *1 *2 Reverse Breakdown Voltage
IO
*1
Continuous Forward Current
IFSM
*1 Peak Surge Current (tp= 1/120 s)
Top
Operating Junction Temperature Range
Tstg
Storage Temperature Range
NOTE 1: Each Diode
NOTE 2: Pulsed: PW = 100ms max.; duty cycle < 20%
Electrical Characteristics (Per Diode) @ 25擄C unless otherwise specified
Symbol Parameter
Conditions
Min
60
1
1.5
0.1
8.0
40
20
Vdc
Vdc
uAdc
pF
ns
ns
Max
Unit
BV1
Breakdown Voltage
IR = 10uAdc
Vf1
Forward Voltage
IF = 100mAdc *1
Vf2
Forward Voltage
IF = 500mAdc *1
IR1
Reverse Current
VR = 40 Vdc
Ct
Capacitance (pin to pin)
VR = 0 Vdc ; f = 1 MHz
tfr
Forward Recovery Time IF = 500mAdc
trr
Reverse Recovery Time IF = IR = 200mAdc, irr = 20 mAdc, RL = 100 ohms
NOTE 1: Pulsed: PW = 300us +/- 50us, duty cycle < 2%, 90us after leading edge
Packaging Options:
W: Wafer (100% probed) U: Wafer (sample probed)
D: Chip (Waffle Pack)
B: Chip (Vial)
V: Chip (Waffle Pack, 100% visually inspected) X: Other
Metallization Options:
Standard: Al Top
/ Au Backside (No Dash #)
Processing Options:
Standard: Capable of JANTXV application (No Suffix)
Suffix C: Commercial
Suffix S: Capable of S-Level equivalent applications
ORDERING INFORMATION
PART #: 28M0_ _- _
First Suffix Letter: Packaging Option
Second Suffix Letter: Processing Option
Dash #: Metallization Option
Sertech reserves the right to make changes to any product design, specification or other information at any time without prior
notice.
MSC1025.PDF Rev - 12/3/98
1
