Target Data 05/01
25MT060WF
"FULL-BRIDGE" IGBT MTP
Warp Speed IGBT
Features
鈥?Gen. 4 Warp Speed IGBT Technology
鈥?HEXFRED
TM
Antiparallel Diodes with
UltraSoft Reverse Recovery
鈥?Very Low Conduction and Switching Losses
鈥?Optional SMT Thermystor Inside
鈥?Aluminum Nitride DBC
鈥?Very Low Stray Inductance Design for
High Speed Operation
V
CES
= 600V
V
CE(on) typ.
= 2.2V @
V
GE
= 15V, I
C
= 25A
T
C
= 25擄C
Benefits
鈥?Optimized for Welding, UPS and SMPS Applications
鈥?Operating Frequencies > 20 kHz Hard Switching,
>200 kHz Resonant Mode
鈥?Low EMI, requires Less Snubbing
鈥?Direct Mounting to Heatsink
鈥?PCB Solderable Terminals
鈥?Very Low Junction-to-Case Thermal Resistance
Absolute Maximum Ratings
Parameters
V
CES
I
C
I
CM
I
LM
I
F
Max
600
@ T
C
= 25擄C
@ T
C
= 100擄C
50
25
200
200
@ T
C
= 100擄C
25
200
鹵 20
2500
900
400
@ T
C
= 25擄C
@ T
C
= 100擄C
Units
V
A
Collector-to-Emitter Voltage
Continuos Collector Current
Pulsed Collector Current
Peak Switching Current
Diode Continuous Forward Current
Peak Diode Forward Current
Gate-to-Emitter Voltage
RMS Isolation Voltage, Any Terminal to Case, t = 1 min
Maximum Power Dissipation
I
FM
V
GE
V
ISOL
P
D
V
W
1
1
2
3
