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24LC01BI/SN Datasheet

  • 24LC01BI/SN

  • (114.15 k)

  • 12頁

  • ETC

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M
FEATURES
24LC01B/02B
PACKAGE TYPES
PDIP
A0
A1
A2
Vss
1
24LC01B/02B
2
3
4
8
7
6
5
Vcc
WP
SCL
SDA
1K/2K 2.5V I
2
C
鈩?/div>
Serial EEPROM
鈥?Single supply with operation down to 2.5V
鈥?Low power CMOS technology
- 1 mA active current typical
- 10
碌A(chǔ)
standby current typical at 5.5V
- 5
碌A(chǔ)
standby current typical at 3.0V
鈥?Organized as a single block of 128 bytes (128 x 8)
or 256 bytes (256 x 8)
鈥?2-wire serial interface bus, I
2
C鈩?compatible
鈥?100 kHz (2.5V) and 400kHz (5.0V) compatibility
鈥?Self-timed write cycle (including auto-erase)
鈥?Page-write buffer for up to 8 bytes
鈥?2 ms typical write cycle time for page-write
鈥?Hardware write protect for entire memory
鈥?Can be operated as a serial ROM
鈥?ESD protection > 3,000V
鈥?1,000,000 E/W cycles guaranteed
鈥?Data retention > 200 years
鈥?8 pin DIP or SOIC package
鈥?Available for temperature ranges
- Commercial (C):
0藲C to +70藲C
- Industrial (I):
-40藲C to +85藲C
SOIC
A0
A1
A2
Vss
1
24LC01B/02B
2
3
4
8
7
6
5
Vcc
WP
SCL
SDA
DESCRIPTION
The Microchip Technology Inc. 24LC01B and 24LC02B
are 1K bit and 2K bit Electrically Erasable PROMs. The
devices are organized as a single block of 128 x 8 bit or
256 x 8 bit memory with a two wire serial interface. Low
voltage design permits operation down to 2.5 volts with
a standby and active currents of only 5
碌A(chǔ)
and 1 mA
respectively. The 24LC01B and 24LC02B also have
page-write capability for up to 8 bytes of data. The
24LC01B and 24LC02B are available in the standard
8-pin DIP and an 8-pin surface mount SOIC package.
BLOCK DIAGRAM
WP
HV GENERATOR
I/O
CONTROL
LOGIC
MEMORY
CONTROL
LOGIC
XDEC
EEPROM
ARRAY
PAGE LATCHES
SDA SCL
YDEC
V
CC
V
SS
SENSE AMP
R/W CONTROL
漏
1998 Microchip Technology Inc.
DS20071I-page 1

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