I27124 rev. D 02/03
鈥?/div>
UltraFast Non Punch Through (NPT)
UltraFast NPT IGBT
V
CES
= 1200V
I
C
= 40A
T
C
= 25擄C
Benefits
Applications
鈥?Rugged with UltraFast Performance
鈥?Benchmark Efficiency above 20KHz
鈥?Outstanding ZVS and Hard Switching
Operation
鈥?Low EMI, requires Less Snubbing
鈥?Excellent Current Sharing in Parallel
Operation
鈥?Direct Mounting to Heatsink
鈥?PCB Solderable Terminals
鈥?Very Low Junction-to-Case Thermal
Resistance
鈥?/div>
Optimized for Welding, UPS and SMPS
MMTP
Absolute Maximum Ratings
Parameters
V
CES
I
I
I
I
I
C
Max
1200
@ T
C
= 25擄C
@ T
C
= 106擄C
40
20
100
100
@ T
C
= 106擄C
25
100
鹵 20
2500
240
96
@ T
C
= 25擄C
@ T
C
= 100擄C
Units
V
A
Collector-to-Emitter Breakdown Voltage
Continuos Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
RMS Isolation Voltage, Any Terminal to Case, t = 1 min
Maximum Power Dissipation (only IGBT)
CM
LM
F
FM
V
GE
V
ISOL
P
D
V
W
www.irf.com
1
next