1N4148 / 1N4150 / 1N4448 / 1N914B
Diodes
Switching diode
1N4148 / 1N4150 / 1N4448 / 1N914B
鈭桾his
product is available only outside of Japan.
!
Applications
High-speed switching
!
External dimensions
(Units : mm)
!
Features
1) Glass sealed envelope. (GSD)
2) High speed.
3) High reliability.
CATHODE BAND (BLACK)
Type No.
蠁
0.5
鹵
0.1
C
29
鹵1
3.8
鹵
0.2
29
鹵1
A
蠁
1.8
鹵
0.2
!
Construction
Silicon epitaxial planar
ROHM : GSD
EIAJ :
鈭?/div>
JEDEC : DO-35
!
Absolute maximum ratings
(Ta = 25擄C)
Type
1N4148
1N4150
1N4448
(1N914B)
V
RM
(V)
100
50
100
V
R
(V)
75
50
75
I
FM
(mA)
450
600
450
I
O
(mA)
150
200
150
I
F
(mA)
200
250
200
I
FSM
1碌s
(A)
2
4
2
P
(mW)
500
500
500
Tj
(
擄C
)
200
200
200
Topr
(
擄C
)
鈭?5
~
+200
鈭?5
~
+200
鈭?5
~
+200
Tstg
(
擄C
)
鈭?5
~
+200
鈭?5
~
+200
鈭?5
~
+200
!
Electrical characteristics
(Ta = 25擄C)
V
F
(V)
Type
@
@
@
1mA
BV (V) Min.
@
30mA
I
R
(碌A(chǔ)) Max.
@25
擄C
V
R
(V)
0.025
5.0
0.1
0.025
5.0
20
75
50
20
75
50.0
@
2mA
@
5mA
@
10mA
@
20mA
@
50mA
@
@
@
0.1mA 0.25mA
100mA 200mA 250mA
@
5碌A(chǔ)
75
@
100碌A(chǔ)
100
@150
擄C
t
rr
(ns)
V
R
=6V
V
R
=0
I
F
=10mA
V
R
(V) f=1MHz R
L
=100鈩?/div>
20
4
4
C
r
(pF)
1N4148
0.54
1N4150
0.62
1N4448
(IN914B)
0.62
0.72
1.0
0.74
0.86
0.92
1.0
1.0
0.66
0.76
0.82
0.87
鈭?/div>
鈭?/div>
50
100.0
50
2.5
4
100
50.0
20
4
4
The upper figure is the minimum V
F
and the lower figure is the maximum V
F
value.
1
2
