MAX.
鈥?/div>
Tungsten schottky barrier
Oxide passivated structure
Guard ring protection for increased reverse energy capability
Epitaxial structure minimizes forward voltage drop
Hermetically sealed, low profile ceramic surface mount power package
Low package inductance
Very low thermal resistance
Available as standard polarity (strap is anode: 1N6817) and reverse
polarity (strap is cathode: 1N6817R)
TXV-level screening (MSASC25W100KV) or S-level (MSASC25W100KS)
screening i.a.w. Microsemi internal procedure PS11.50 available
Maximum Ratings @ 25擄C (unless otherwise specified)
擄
DESCRIPTION
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current, T
c
鈮?/div>
145擄C
derating, forward current, T
c
鈮?/div>
145擄C
Nonrepetitive Peak Surge Current, t
p
= 8.3 ms, half-sinewave
Peak Repetitive Reverse Surge Current, t
p
= 1碌s, f= 1kHz
Junction Temperature Range
Storage Temperature Range
Thermal Resistance, Junction to Case:
1N6817
1N6817R
SYMBOL
V
RRM
V
RWM
V
R
I
F(ave)
dI
F
/dT
I
FSM
I
RRM
T
j
T
stg
胃
JC
UNIT
Volts
Volts
Volts
Amps
Amps/擄C
Amps
Amp
擄C
擄C
擄C/W
Mechanical Outline
ThinKey鈩?
Datasheet# MSC1034B August, 2000
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