TECHNICAL DATA
ULTRAFAST SILICON POWER RECTIFIER
Qualified per MIL-PRF-19500/646
Devices
1N6774
1N6775
1N6776
1N6777
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Working Peak Reverse Voltage
Forward Current
T
C
= +100擄C
(1)
Forward Current Surge Peak T
P
= 8.3
0
C
Operating & Storage Junction Temperature
Symbol
1N6774 1N6775 1N6776 1N6777
Unit
V
RWM
I
F
I
FSM
T
op
,
T
stg
Symbol
R
胃
JC
R
胃
JA
0
50
100
150
200
15
180
-65 to +150
Max.
2.0
40
Vdc
Adc
A
pk
0
C
Unit
C/W
C/W
*See appendix A for
package
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
1) Derate at 300 mA/
0
C above T
C
= +100
0
C
0
0
TO-257*
(2-PIN-ISOLATED)
ELECTRICAL CHARACTERISTICS (T
C
= +25
C Unless Otherwise Noted)
outline
Characteristics
Forward Voltage
I
F
=
8.0 Adc, pulsed
I
F
= 15
Adc, pulsed
Reverse Current Leakage
V
R
= 0.8 of V
RWM
Thermal Impedance
t
t
I
M
=15 mAdc; I
H
= 9.9 Adc; H = 200 ms; MD = 35
碌s;
V
H
= 1
Vdc
Breakdown Voltage
I
R
= 10
碌A(chǔ)dc
1N6774
1N6775
1N6776
1N6777
Junction Capacitance
V
R
= 5.0 Vdc, f = 1.0 MHz
Reverse Recovery Time
I
F
= 1.0 Adc; di/dt = 50 A/碌s
Symbol
V
F
I
R
Z
脴JX
Min.
Max.
1.00
1.15
10
Unit
Vdc
碌A(chǔ)dc
0
C/W
1.8
50
100
150
200
300
35
V
BR
Vdc
C
J
t
rr
pF
畏s
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 1
1
