1N6620US thru 1N6625US
VOIDLESS-HERMETICALLYSEALED
SURFACE MOUNT ULTRA FAST
RECOVERY GLASS RECTIFIERS
SCOTTSDALE DIVISION
DESCRIPTION
This 鈥淯ltrafast Recovery鈥?rectifier diode series is military qualified to MIL-PRF-
19500/585 and is ideal for high-reliability applications where a failure cannot be
tolerated. These industry-recognized 1.5 to 2.0 Amp rated rectifiers for working
peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-
glass construction using an internal 鈥淐ategory I鈥?metallurgical bond. These devices
are also available in axial-leaded packages for thru-hole mounting (see separate
data sheet for 1N6620 thru 1N6625). Microsemi also offers numerous other rectifier
products to meet higher and lower current ratings with various recovery time speed
requirements including standard, fast and ultrafast device types in both through-hole
and surface mount packages.
IMPORTANT:
For the most current data, consult
MICROSEMI鈥檚
website:
http://www.microsemi.com
APPEARANCE
WWW .
Microsemi
.C
OM
Package 鈥淎鈥?/div>
or D-5A
FEATURES
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Surface mount series equivalent to the JEDEC
registered 1N6620 to 1N6625 series
Voidless hermetically sealed glass package
Extremely robust construction
Triple-layer passivation
Internal 鈥淐ategory
I鈥?/div>
Metallurgical bonds
JAN, JANTX, and JANTXV available per MIL-PRF-
19500/585
Further options for screening in accordance with MIL-
PRF-19500 for JANS by using a 鈥淢SP鈥?prefix, e.g.
MSP6620US, MSP6624US, etc.
Axial-leaded equivalents also available (see separate
data sheet for 1N6620 thru 1N6625)
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APPLICATIONS / BENEFITS
Ultrafast recovery rectifier series 200 to 1000 V
Military and other high-reliability applications
Switching power supplies or other applications
requiring extremely fast switching & low forward
loss
High forward surge current capability
Low thermal resistance
Controlled avalanche with peak reverse power
capability
Inherently radiation hard
as described in Microsemi
MicroNote 050
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MAXIMUM RATINGS
鈥?/div>
Junction Temperature: -65
o
C to +175
o
C
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Storage Temperature: -65
o
C to +175
o
C
o
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Peak Forward Surge Current @ 25 C: 20 Amps (except
1N6625 which is 15 Amps)
Note: Test pulse = 8.3 ms, half-sine wave.
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Average Rectified Forward Current (I
O
) at T
EC
=+110
o
C:
1N6620 thru 1N6622: 2.0 Amps
1N6623 thru 1N6625: 1.5 Amps
(Derate linearly at 1.5%/
o
C for T
EC
> +110
o
C)
o
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Average Rectified Forward Current (I
O
) at T
A
=25 C:
1N6620 thru 1N6622: 1.2 Amps
1N6623 thru 1N6625: 1.0 Amp
(Derate linearly at 0.67%/
o
C for T
A
>+25
o
C. This I
O
rating is typical for PC boards where thermal resistance
from mounting point to ambient is sufficiently controlled
where T
J(max)
is not exceeded.)
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Thermal Resistance junction to endcap (R
胃JEC
): 20
o
C/W
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Capacitance at V
R
= 10 V: 10 pF
o
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Solder temperature: 260 C for 10 s (maximum)
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MECHANICAL AND PACKAGING
CASE: Hermetically sealed voidless hard glass
with Tungsten slugs
TERMINATIONS: End caps are solid Silver (Ag)
with Tin/Lead (Sn/Pb) finish
MARKING: Cathode band only
POLARITY: Cathode indicated by band
Tape & Reel option: Standard per EIA-481-B
Weight: 193 mg
See package dimensions and recommended pad
layout on last page
1N6620US 鈥?1N6625US
Copyright
漏
2005
6-19-2005 REV B
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
1N6624US相關(guān)型號(hào)PDF文件下載
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型號(hào)
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英文版
GOLD BONDED DIODES
ETC
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General Purpose Diodes
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General Purpose Diodes
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COMPUTER DIODE Switching
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COMPUTER DIODE Switching
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3.0 A Forward Current 70 ns Recovery Time
ETC
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