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KSF30A20E Datasheet

  • KSF30A20E

  • DIFFUSION-TYPE SILICON DIODE

  • 4頁

  • NIEC

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FRD
Type
錛?/div>
KSF30A20E
鈻燨UTLINE DRAWING
妲嬮€?/div>
錛氭嫛鏁ｅ瀷銈楓儶銈熾兂銉€銈ゃ偑銉箋儔(F R D)
Construction: Diffusion-type Silicon Diode
鐢ㄩ€?/div>
錛氶珮鍛ㄦ嘗鏁存祦鐢?/div>
Application : High Frequency Rectification
鈻犳渶澶у畾鏍?/ Maximum Ratings
Rating
銇忋倞榪斻仐銉斻兗銈€嗛浕鍦?/div>
Repetitive Peak Reverse Voltage
騫沖潎鏁存祦闆繪祦
Average Rectified Output Current
瀹熷姽闋嗛浕嫻?/div>
RMS Forward Current
銈點兗銈擱爢闆繪祦
Surge Forward Current
鍕曪拷½錕芥帴鍚堟俯搴︾瘎鍥?/div>
Operating JunctionTemperature Range
淇濆瓨娓╁害綃勫洸
Storage Temperature Range
綬犮倎浠樸亼銉堛儷銈?/div>
Mounting torque
Symbol
V
RRM
I
O
I
F(RMS)
I
FSM
Tjw
Tstg
0.5
400
30
Tc=101鈩?/div>
Approx Net Weight:6g
KSF30A20E
200
50 Hz銆佹寮﹀崐娉㈤€氶浕鎶墊姉璨犺嵎
Half Sine Wave Resistive Load
47
50 Hz 姝ｅ雞鍗婃嘗, 1銈點偆銈儷, 闈炪亸銈婅繑銇?/div>
Half Sine Wave,1cycle,Non-repetitive
- 40 鈭?+ 150
- 40 鈭?+ 150
鎺ㄥエ鍊?/div>
Recommended value
Unit
V
A
A
A
鈩?/div>
鈩?/div>
N錕?frac12;錕絤
鈻犻浕姘楃殑銉?nèi)潌辩殑鐗规€?/ Electrical 錕?frac12;錕?Thermal Characteristics
Characteristics
銉斻兗銈€嗛浕嫻?/div>
Peak Reverse Current
銉斻兗銈爢闆誨湩 *
Peak Forward Voltage
閫嗗洖寰╂檪闁?/div>
Reverse Recovery Time
鐔辨姷鎶?/div>
Thermal Resistance
Symbol
I
RM
V
FM
trr
Conditions
Tj= 25 鈩? V
RM
= V
RRM
Tj= 25 鈩? I
FM
= 30 A
Mni.
-
-
-
-
Typ.
-
-
-
-
Max.
25
0.98
50
1.4
Unit
渭A
V
ns
鈩?W
I
FM
= 10 A,
-di/dt= 50 A/渭s, Ta= 25鈩?/div>
鎺ュ悎閮ㄣ兓銈便兗銈歸枔
Rth(j-c)
Junction to Case

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